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Martin Heiss

Cette personne a quitté l’EPFL

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Publications associées (35)

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Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

Anna Fontcuberta i Morral, Martin Heiss, Sonia Conesa Boj, Emanuele Uccelli, Efthimios Kaxiras, Jun Ren

A method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminesc ...

2011

Quantum Dot Opto-Mechanics in a Fully Self-Assembled Nanowire

Anna Fontcuberta i Morral, Eleonora Russo, Martin Heiss, Yannik Fontana

We show that optically active quantum dots (QDs) embedded in MBE-grown GaAs/AlGaAs core-shell nanowires (NWs) are coupled to the NW mechanical motion. Oscillations of the NW modulate the QD emission energy in a broad range exceeding 14 meV. Furthermore, th ...

American Chemical Society2014

Probing inhomogeneous composition in core/shell nanowires by Raman spectroscopy

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin Heiss, Federico Matteini, Eleonora Russo, Sonia Conesa Boj, Esther Alarcon Llado, Francesca Amaduzzi

Due to its non-destructive and its micro-spatial resolution, Raman spectroscopy is a powerful tool for a rapid structural and compositional characterization of nanoscale materials. Here, by combining the compositional dependence of the Raman peaks with the ...

American Institute of Physics2014

Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction

Anna Fontcuberta i Morral, Martin Heiss, Anna Dalmau Mallorquí, Carlo Colombo, Pierre Loïc Blanc

Semiconductor nanowires are currently at the forefront of research in the areas of nanoelectronics and energy conversion. In all these studies, realising electrical contacts and statistically relevant measurements is a key issue. We propose a method that e ...

Inderscience2013

Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis

Anna Fontcuberta i Morral, Martin Heiss

Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semicon ...

American Chemical Society2012

Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires

Anna Fontcuberta i Morral, Martin Heiss, Eleonora Russo, Luca Francaviglia, Sonia Conesa Boj, Yannik Fontana

GaAs/Al-GaAs core-shell nanowires fabricated by molecular beam epitaxy contain quantum confining structures susceptible of producing narrow photoluminescence (PL) and single photons. The nanoscale chemical mapping of these structures is analyzed in 3D by a ...

American Institute of Physics2014

Untangling the Electronic Band Structure of Wurtzite GaAs Nanowires by Resonant Raman Spectroscopy

Anna Fontcuberta i Morral, Martin Heiss, Emanuele Uccelli, Bernt Ketterer

In semiconductor nanowires, the coexistence of wurtzite and zinc-blende phases enables the engineering of the electronic structure within a single material. This presupposes an exact knowledge of the band structure in the wurtzite phase. We demonstrate tha ...

American Chemical Society2011

Vertical "III-V" V-Shaped Nanomembranes Epitaxially Grown on a Patterned Si[001] Substrate and Their Enhanced Light Scattering

Anna Fontcuberta i Morral, Martin Heiss, Sonia Conesa Boj, Anna Dalmau Mallorquí, Eleonora Russo

We report on a new form of III-IV compound semiconductor nanostructures growing epitaxially as vertical V-shaped nanomembranes on Si(001) and study their light-scattering properties. Precise position control of the InAs nanostructures in regular arrays is ...

American Chemical Society2012

Nanoskiving Core-Shell Nanowires: A New Fabrication Method for Nano-optics

Anna Fontcuberta i Morral, Eleonora Russo, Martin Heiss, Yannik Fontana

This paper describes the fabrication of functional optical devices by sectioning quantum-dot-in-nanowires systems with predefined lengths and orientations. This fabrication process requires only two steps, embedding the nanowires in epoxy and using an ultr ...

Amer Chemical Soc2014

Polarization response of nanowires a la carte

Anna Fontcuberta i Morral, Eleonora Russo, Esther Alarcon Llado, Martin Heiss, Francesca Amaduzzi, Alberto Casadei

Thanks to their special interaction with light, semiconductor nanowires have opened new avenues in photonics, quantum optics and solar energy harvesting. One of the major challenges for their full technological deployment has been their strong polarization ...

Nature Publishing Group2015

Semiconductor nanowires for efficient, sustainable solar energy harvesting

Anna Fontcuberta i Morral, Martin Heiss, Anna Dalmau Mallorquí

SPIE-Intl Soc Optical Eng2013

Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

Anna Fontcuberta i Morral, Eleonora Russo, Martin Heiss, Emanuele Uccelli, Lionel Michelet

Multiple seed formation by three-dimensional twinning at the initial stages of growth explains the manifold of orientations found when self-catalyzed GaAs nanowires grow on silicon. This mechanism can be tuned as a function of the growth conditions by chan ...

2012

Magnetic states of an individual Ni nanotube probed by anisotropic magnetoresistance

Anna Fontcuberta i Morral, Dirk Grundler, Martin Heiss, Eleonora Russo, Daniel Rüffer

Defined magnetization states in magnetic nanotubes could be the basic building blocks for future memory elements. To date, it has been extremely challenging to measure the magnetic states at the single-nanotube level. We investigate the magnetization state ...

Royal Soc Chemistry2012

Exciton footprint of self-assembled AlGaAs quantum dots in core-shell nanowires

Anna Fontcuberta i Morral, Eleonora Russo, Pierre Michel Corfdir, Martin Heiss, Yannik Fontana, Samuel Sonderegger

Quantum-dot-in-nanowire systems constitute building blocks for advanced photonics and sensing applications. The electronic symmetry of the emitters impacts their function capabilities. Here we study the fine structure of gallium-rich quantum dots nested in ...

American Physical Society2014

Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates

Anna Fontcuberta i Morral, François Morier-Genoud, Eleonora Russo, Martin Heiss, Emanuele Uccelli

In this paper we introduce a new paradigm for nanowire growth that explains the unwanted appearance of parasitic nonvertical nanowires. With a crystal structure polarization analysis of the initial stages of GaAs nanowire growth on Si substrates, we demons ...

American Chemical Society2011