Publications de Amélie Dussaigne

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High quality GaN/AlGaN multiquantum well (QW) structures were grown by ammonia molecular beam epitaxy along the (0001) polar and (11 (2) over bar0) nonpolar directions. Each sample contains three QWs with thicknesses of 2, 3, and 4 nm as well as 10 nm Al0. ...

We present a combined low-temperature time-resolved cathodoluminescence and photoluminescence study of exciton recombination mechanisms in a 3.8 nm thick a-plane (Al,Ga)N/GaN quantum well (QW). We observe the luminescence from QW excitons and from excitons ...

This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature ra ...

We present a detailed study of the luminescence at 3.42 eV usually observed in a-plane epitaxial lateral overgrowth (ELO) GaN grown by hydride vapor phase epitaxy on r-plane sapphire. This band is related to radiative recombination of excitons in a commonl ...

We study the carrier-density-dependent recombination dynamics in m-plane InGaN/GaN multiple quantum wells in the presence of n-type background doping by time-resolved photoluminescence. Based on Fermi's golden rule and Saha's equation, we decompose the rad ...

Time-resolved cathodoluminescence at 27 K has been performed on a-plane GaN grown by epitaxial lateral overgrowth. We detail the relaxation and recombination mechanisms of excitons [free or bound to neutral donors, or bound to I1-type basal stacking faults ...

The effect of thermal annealing on In0.25Ga0.75N/GaN quantum wells grown by molecular beam epitaxy at 550 degrees C is investigated. A strong increase in the 300 K photoluminescence (PL) intensity is observed for samples annealed at 880 degrees C, while de ...

High mobility Al0.28Ga0.72N/GaN two-dimensional electron gas (2DEG) is achieved on ( 111) oriented single crystal diamond substrate. The surface morphology of the epilayer is free of cracks thanks to the use of an AlN interlayer for strain relaxation. The ...

Nonpolar GaN based microcavity (MC) made of a bottom AlN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO2/SiNx DBR has been fabricated on a-plane GaN template. The 13 pair AlN/GaN DBR, centered around 372 nm, exhibits a peak reflectivity of ...

Contactless electroreflectance (CER) has been applied to study optical transitions between the ground and excited states in polar and a-plane nonpolar 2 nm wide GaN/Al0.12Ga0.88N quantum well (QW) structures. In addition to the fundamental transition, CER ...

In-depth optical spectroscopic studies of single polar GaN/AlN quantum dots (QDs) grown by molecular beam epitaxy are carried out by means of low-temperature microphotoluminescence. Luminescence linewidths as low as 700 mu eV are obtained allowing thorough ...

The pronounced optical in-plane anisotropy of a suitably designed nonpolar GaN-based microcavity, mainly inherited from the valence-band complexity of wurtzite semiconductors, allows the coexistence of two different light-matter coupling regimes along orth ...

AlGaN/GaN HEMTs have been fabricated directly on (111) oriented single crystal diamond with 1.3 x 10(13) cm(-2) channel sheet charge density and 731 cm(2)/Vs mobility. 0.2 mu m gate length devices showed 0.73 A/mm maximum drain current density and f(T) and ...

GaN epilayers are grown on (111) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in situ by reflection high energy electron diffraction. It is found that a two-dimensional epitaxial w ...

The origin of efficiency droop in state-of-the-art quality In GaN/GaN and GaN/AlGaN quantum wells (QWs) grown on various crystal planes is studied by means of time-resolved photoluminescence spectroscopy associated with a precise determination of the QW ca ...

We present a comprehensive study of the anisotropic optical properties of nonpolar GaN/AlGaN multiple quantum wells intentionally designed to act as an active region of a planar microcavity operating in the strong-coupling regime. The strain induced by the ...

Transmission electron microscopy and photoluminescence investigations have been carried out on a series of quantum wells grown by molecular beam epitaxy and metal organic vapour phase epitaxy. In both cases, the emission wavelength and the peak width agree ...

We have studied the properties of Mg-doped GaN epilayers grown by molecular beam epitaxy (MBE) with ammonia as nitrogen source. GaN p-n homojunctions has been developed to determine the optoelectronic characteristics of the junctions as a function of the p ...

Amélie Dussaigne

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Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions

Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m-plane InGaN/GaN quantum wells

Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well

High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

Nonpolar GaN-based microcavity using AlN/GaN distributed bragg reflector

Contactless electroreflectance of polar and nonpolar GaN/AlGaN quantum wells

Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field

Nonlinear emission properties of an optically anisotropic GaN-based microcavity

AlGaN/GaN HEMT on (111) single crystalline diamond

GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Tailoring the light-matter coupling in anisotropic microcavities: Redistribution of oscillator strength in strained m-plane GaN/AlGaN quantum wells

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green

High doping level in Mg-doped GaN layers grown at low temperature