Giovanni Antonio Salvatore

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Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...

Interest in Ferroelectric FETs originates from their potential as non-volatile memories and, more recently, as abrupt switches. In this work, we focus on the role of the Curie temperature of the gate stack on the performance of Fe-FETs. The proposed study ...

A silicone-based one-transistor nonvolatile memory cell has been implemented by integration of a ferroelectric polymer gate on a standard n- type metal oxide semiconductor field effect transistor. The polarization reversal in the gate results in a stable a ...

The performance of a standard MOSFET degrades with the increase in temperature, impacting the power consumption of the device. In this paper, we report the opposite trend, which is reflected in an improvement of main performance factors in ferroelectric FE ...

This work experimentally demonstrates, for the first time, that by integrating a thin ferroelectric layer into a gate stack of a standard MOS transistor one, it is possible to overcome the 60 mV/decade subthreshold swing limit at room temperature of MOSFET ...

In this paper, we report the basic design conditions and the experimental confirmation of a temperature dependent negative capacitance (NC) effect in a ferroelectric field-effect-transistor (Fe-FET). We find that the internal voltage amplification peaks of ...

A polymer based Ferroelectric gate FET at 1T non-volatile memory on bulk silicon is demonstrated. Spin-coated 40 nm and 100 nm P(VDF-TrFE) (70%-30%) ultra-thin films have been integrated onto 10 nm SiO₂ layer as gate dielectric into a conventional silicon ...

Giovanni Antonio Salvatore

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1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

The Curie temperature as a key design parameter of ferroelectric Field Effect Transistors

Retention in nonvolatile silicon transistors with an organic ferroelectric gate

Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's Theory

Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO₂ gate stack

Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor

Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory