Recherche

Afficher tous les résultats pour

Accueil

Personne

Montserrat Fernandez-Bolanos Badia

Cette personne n’est plus à l’EPFL

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (45)

A 6.7 MHz Nanoelectromechanical Ring Oscillator Using Curved Cantilever Switches Coated with Amorphous Carbon

Daniel Grogg, Montserrat Fernandez-Bolanos Badia, Antonios Bazigos

Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low power digital electronics. This paper reports the demonstration of the first ring oscillator built using cell-level digit ...

IEEE2014

Electromechanical design space exploration for electrostatically actuated ohmic switches using extended parallel plate compact model

Mihai Adrian Ionescu, Daniel Grogg, Montserrat Fernandez-Bolanos Badia, Antonios Bazigos

The nanoscaled electrostatically actuated electromechanical ohmic switch is an emerging device with advanced performance in terms of ION/IOFF ratio. It is imperative that compact models accompany such novel devices in order to fully evaluate their potentia ...

Elsevier2014

Analytical Compact Model in Verilog-A for Electrostatically Actuated Ohmic Switches

Mihai Adrian Ionescu, Daniel Grogg, Montserrat Fernandez-Bolanos Badia, Yu Pu, Antonios Bazigos

Nowadays, electronics face a challenge regarding the power consumption of integrated circuits (ICs). There is a need for new devices that can provide improved switching capabilities. The downscaled electrostatically actuated ohmic switch, as a (re)emerging ...

Ieee-Inst Electrical Electronics Engineers Inc2014

Steep slope VO2 switches for wide-band (DC-40 GHz) reconfigurable electronics

Mihai Adrian Ionescu, Wladyslaw Grabinski, Andreas Schueler, Montserrat Fernandez-Bolanos Badia, Antonio Paone, Wolfgang Amadeus Vitale, Antonios Bazigos

IEEE2014

RF MEMS power sensors for ultra-low power wake-up circuit applications

Catherine Dehollain, Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Antonios Bazigos

Power savings requirements in wake-up circuits and RFID applications can greatly benefit from the emerging RF MEM technology. In this paper we report an RF MEM power sensor that can simultaneously offer significant power savings and co-integration with wak ...

2013

Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Matthieu Berthomé, Elizabeth Buitrago Godinez

Silicon nanowire (SiNW) field effect transistors (FETs) have been widely investigated as biological sensors for their remarkable sensitivity due to their large surface to volume ratio (S/V) and high selectivity towards a myriad of analytes through function ...

Elsevier2013

Functionalized 3D 7x20-array of vertically stacked SiNW FET for streptavidin sensing

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Elizabeth Buitrago Godinez

A 3D, vertically stacked silicon nanowire (SiNW) field effect transistor (FET) featuring a high density array (7×20) of fully depleted channels has been successfully fabricated by a CMOS compatible process on silicon on insulator (SOI) and functionalized f ...

IEEE2013

Tungsten Through Silicon Vias for 3D high quality factor embedded RF MEMS inductors

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Josef Weber

2013

Vertically stacked Si nanostructures for biosensing applications

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Elizabeth Buitrago Godinez

High density (7-10 NW/μm) SiNW arrays of up to 16 nanowires vertically stacked with diameter widths below 20 nm have been successfully fabricated to create highly sensitive 3D FETs for biosensing applications. In order to take advantage of the increased se ...

Elsevier2012

High-Q 3D Embedded Inductors using TSV for RF MEMS Tunable Bandpass Filters (4.65-6.8 GHz)

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale

IEEE2012

A Microfabricated 1-D Metamaterial Unit Cell Matched From DC to Millimeter-Waves

Frédéric Bongard, Julien Perruisseau-Carrier, Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia

A silicon-integrated one-dimensional CRLH-TL metamaterial unit cell is presented. Ultra broadband behavior is achieved by implementing the previously proposed 'lattice network' CRLH-TL unit cell in a monolayer host transmission line, as required for simple ...

Institution of Engineering and Technology2011

RF MEMS Switches for Wide-band (5 - 40 GHz), Tuneable Filters and DMTL Phase Shifters

Montserrat Fernandez-Bolanos Badia

In wireless communications, radio frequency micro-electro-mechanical systems (RF MEMS) technology is attracting tremendous interest across the world as the needs of frequencies gets higher, data bandwidth gets larger and multiple broadband signals have to ...

EPFL2010

Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance

Catherine Dehollain, Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia

This paper presents a novel high-frequency tunable band-stop filter concept based on a single MEMS capacitive shunt device which uses meander arm anchoring inductors and with a total size of 300 × 600 μm. Tuning ranges of the central frequency in the order ...

Elsevier2010

Tunable MEMS capacitors using vertical carbon nanotube arrays grown on metal lines

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Donatello Acquaviva, Anupama Arun

In this work, tunable MEMS capacitors are realized using a vertically grown carbon nanotube array. The vertical CNT array forms an effective CNT membrane, which can be electrostatically actuated like the conventional metal plates used in MEMS capacitors. T ...

2010

Highly Tunable Band-Stop Filters Based on AIN RF MEM Capacitive Switches with Inductive Arms and Zipping Capacitive Coupling

Catherine Dehollain, Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Dimitrios Tsamados

This paper presents wideband tunable band-stop filters working in the Ku to Ka-band frequencies based on a miniature single-MEM device combining a central capacitive MEM switch with AlN dielectric and inductive suspension arms. An outstanding 55% tuning ra ...

IEEE2009

Centre frequency and bandwidth tunable bandpass filter based on RF MEMS (10-14 GHz)

Catherine Dehollain, Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Suat Ayoz

This paper presents a novel tunable bandpass filter design with independent control of both the centre frequency and the bandwidth by means of analogue-series and digital-shunt MEMS capacitors. The filter is designed for operation in X and Ku bands with 4 ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance

Catherine Dehollain, Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia

This paper presents a novel high-frequency filter concept based on a single MEMS capacitive shunt structure using meander arm inductance. Tuning ranges of the central frequency in the order of 55% are experimentally demonstrated for filters operating betwe ...

2009

Silicon-integrated fixed and reconfigurable CRLH unit cells based on lattice topology

Juan Ramon Mosig, Frédéric Bongard, Julien Perruisseau-Carrier, Montserrat Fernandez-Bolanos Badia

2009

RF MEMS capacitive switch on semi-suspended CPW using low-loss high-resistivity silicon substrate

Julien Perruisseau-Carrier, Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia

A high capacitive ratio RF MEMS switch, with low-actuation voltage is designed, fabricated and experimentally validated on high-resistivity silicon (HRS) substrate. Thanks to very good fabrication control of all steps and to the high dielectric constant of ...

Elsevier2008

High-Isolation Shunt-Series MEMS Switch for a Wide Frequency Range (6-40GHz)

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia

A fabrication method for silicon beams and membranes defined in lateral and vertical dimensions, as well as superposed silicon membranes, all realized in bulk silicon using only one lithographic step is proposed. This proposal is based on observations made ...

2008

Page 2 sur 3