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Montserrat Fernandez-Bolanos Badia

Cette personne a quitté l’EPFL

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Publications associées (45)

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High-Isolation Shunt-Series MEMS Switch for a Wide Frequency Range (6-40GHz)

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia

A fabrication method for silicon beams and membranes defined in lateral and vertical dimensions, as well as superposed silicon membranes, all realized in bulk silicon using only one lithographic step is proposed. This proposal is based on observations made ...

2008

Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance

Mihai Adrian Ionescu, Catherine Dehollain, Montserrat Fernandez-Bolanos Badia

This paper presents a novel high-frequency filter concept based on a single MEMS capacitive shunt structure using meander arm inductance. Tuning ranges of the central frequency in the order of 55% are experimentally demonstrated for filters operating betwe ...

2009

Tunable Capacitors and Microwave Filters Based on Vanadium Dioxide Metal-Insulator Transition

Mihai Adrian Ionescu, Josef Andreas Schuler, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Clara-Fausta Moldovan, Antonio Paone

We report the fabrication, modeling and characterization of novel microwave tunable capacitors based on the metal-insulator transition (MIT) of Vanadium Dioxide (VO2). We present the advantages of VO2-based capacitors over alternative technologies for micr ...

2015

Fine Pitch 3D-TSV Based High Frequency Components for RF MEMS Applications

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale

The development of interconnections suitable for radio- frequency (RF) and millimeter-wave (mm-wave) applications is of foremost importance for the feasibility of high-quality substrate-integrated devices. For this purpose, we introduce and validate the te ...

2015

Thermally Stable Distributed MEMS Phase Shifter for Airborne and Space Applications

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia

This paper presents an in-depth study of the design, modelling, circuit parameter extraction and characterization of a distributed MEMS digital microwave phase shifter. Bridge-type digital capacitors periodically loaded on a 5 mm CPW (with an actuation vol ...

2008

Functionalized 3D 7x20-array of vertically stacked SiNW FET for streptavidin sensing

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Elizabeth Buitrago Godinez

A 3D, vertically stacked silicon nanowire (SiNW) field effect transistor (FET) featuring a high density array (7×20) of fully depleted channels has been successfully fabricated by a CMOS compatible process on silicon on insulator (SOI) and functionalized f ...

IEEE2013

Electromechanical design space exploration for electrostatically actuated ohmic switches using extended parallel plate compact model

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Antonios Bazigos

The nanoscaled electrostatically actuated electromechanical ohmic switch is an emerging device with advanced performance in terms of ION/IOFF ratio. It is imperative that compact models accompany such novel devices in order to fully evaluate their potentia ...

Elsevier2014

Ultra Fine-Pitch TSV Technology for Ultra-Dense High-Q RF Inductors

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale

We demonstrate that fine-pitch TSV technology can be exploited to fabricate micro-inductors on high resistivity substrate, with record-high inductance per area and preserving their performance at GHz frequencies. We report an extensive experimental study o ...

2015

Polyimide sacrificial layer for SOI SG-MOSFET pressure sensor

Mihai Adrian Ionescu, Didier Bouvet, Montserrat Fernandez-Bolanos Badia, Vincent Pott, Georges-André Racine, Nicolas Abelé

This paper reports on the fabrication and electrical characterization of a novel pressure sensor based on a suspended-gate MOSFET (SG-MOSFET) using a new polyimide process. The device is composed of a SG-MOSFET built on a thin SOI membrane released by a ba ...

Elsevier2006

Analytical Compact Model in Verilog-A for Electrostatically Actuated Ohmic Switches

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Antonios Bazigos

Nowadays, electronics face a challenge regarding the power consumption of integrated circuits (ICs). There is a need for new devices that can provide improved switching capabilities. The downscaled electrostatically actuated ohmic switch, as a (re)emerging ...

Ieee-Inst Electrical Electronics Engineers Inc2014

Solid-gap wine-glass mode disks VB-FET resonators applied to biomass sensing

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Mariazel de la Candelas Maqueda López

The working principle of an electromechanical resonator for mass sensing applications is based on monitoring the characteristic resonance frequency downshift due to the particles attachment on the surface of the device. Solid-Gap Vibrating-Body Field Effec ...

Elsevier Science Bv2015

MEMS Capacitive Pressure Sensor Based on Polysilicon Sealed Membrane

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia

This paper presents a pressure sensor based on a variable capacitor formed by a movable polysilicon sealed membrane sensitive to pressure. When operated as a pressure sensor two operation regions are observed, an exponentially sensitivity region at low pre ...

2006

Lowering motional resistance by partially HfO2 gap filling in double-ended tuning fork MEMS resonators

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Emanuele Andrea Casu, Mariazel de la Candelas Maqueda López

IEEE2017

Steep slope VO2 switches for wide-band (DC-40 GHz) reconfigurable electronics

Mihai Adrian Ionescu, Andreas Schueler, Montserrat Fernandez-Bolanos Badia, Antonios Bazigos, Wolfgang Amadeus Vitale, Wladyslaw Grabinski, Antonio Paone

IEEE2014

Tunable MEMS capacitors using vertical carbon nanotube arrays grown on metal lines

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Donatello Acquaviva

In this work, tunable MEMS capacitors are realized using a vertically grown carbon nanotube array. The vertical CNT array forms an effective CNT membrane, which can be electrostatically actuated like the conventional metal plates used in MEMS capacitors. T ...

2010

AlSi-based Resonant Suspended-Gate MOSFET

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Nicolas Abelé, Raphaël Fritschi

2005

A Microfabricated 1-D Metamaterial Unit Cell Matched From DC to Millimeter-Waves

Mihai Adrian Ionescu, Julien Perruisseau-Carrier, Montserrat Fernandez-Bolanos Badia, Frédéric Bongard

A silicon-integrated one-dimensional CRLH-TL metamaterial unit cell is presented. Ultra broadband behavior is achieved by implementing the previously proposed 'lattice network' CRLH-TL unit cell in a monolayer host transmission line, as required for simple ...

Institution of Engineering and Technology2011

Montserrat Fernandez-Bolanos Badia

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High-Isolation Shunt-Series MEMS Switch for a Wide Frequency Range (6-40GHz)

Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance

Tunable Capacitors and Microwave Filters Based on Vanadium Dioxide Metal-Insulator Transition

Fine Pitch 3D-TSV Based High Frequency Components for RF MEMS Applications

Thermally Stable Distributed MEMS Phase Shifter for Airborne and Space Applications

Functionalized 3D 7x20-array of vertically stacked SiNW FET for streptavidin sensing

Electromechanical design space exploration for electrostatically actuated ohmic switches using extended parallel plate compact model

Ultra Fine-Pitch TSV Technology for Ultra-Dense High-Q RF Inductors

Polyimide sacrificial layer for SOI SG-MOSFET pressure sensor

Analytical Compact Model in Verilog-A for Electrostatically Actuated Ohmic Switches

Solid-gap wine-glass mode disks VB-FET resonators applied to biomass sensing

MEMS Capacitive Pressure Sensor Based on Polysilicon Sealed Membrane

Lowering motional resistance by partially HfO2 gap filling in double-ended tuning fork MEMS resonators

Steep slope VO2 switches for wide-band (DC-40 GHz) reconfigurable electronics

Tunable MEMS capacitors using vertical carbon nanotube arrays grown on metal lines

AlSi-based Resonant Suspended-Gate MOSFET

A Microfabricated 1-D Metamaterial Unit Cell Matched From DC to Millimeter-Waves

Tunable RF phase shifters based on Vanadium Dioxide metal insulator transition

High-Q 3D Embedded Inductors using TSV for RF MEMS Tunable Bandpass Filters (4.65-6.8 GHz)

Tungsten Through Silicon Vias for 3D high quality factor embedded RF MEMS inductors