Publications de Raphaël Butté

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The authors report on the achievement of narrow ultraviolet emission using GaN/AlGaN quantum wells grown by metal organic vapor phase epitaxy. The origin of the inhomogeneous broadening of the emission is explained by means of micro-photoluminescence and a ...

In the last decade, aluminum nitride (AlN) has proven to be an attractive material for both linear and nonlinear integrated photonics, due to its large transparency window, its low propagation losses and the presence of both second- and third-order nonline ...

We report the growth of highly reflective distributed Bragg reflectors (DBRs) in the UV region using the Al0.85In0.15N/Al0.2Ga0.8N lattice-matched system. The DBRs were deposited on nearly strain-free Al0.2Ga0.8N templates to avoid strain-induced structura ...

Contrary to the case of III-nitride based visible light-emitting diodes for which the inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well (MQW) heterostructures does not appear as a detrimental parameter, such a broadenin ...

The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering ga ...

We study the relative intensity noise (RIN) per unit bandwidth in polariton laser diodes (LDs) for two pumping geometries, namely, the direct electrical and the intracavity ones as originally described in I. Iorsh et al. [Phys. Rev. B 86, 125308 (2012)], b ...

We observe the buildup of strong (similar to 50%) spontaneous vector polarization in emission from a GaN-based polariton laser excited by short optical pulses at room temperature. The Stokes vector of emitted light changes its orientation randomly from one ...

The authors report room temperature polariton lasing at lambda similar to 345 nm in a hybrid AlInN/AlGaN multiple quantum well microcavity (MQW-MC) containing a GaN/AlGaN MQW active region, i.e., the achievement under nonresonant optical excitation of cohe ...

The authors report a technique for selective wet chemical etching of an AlInN sacrificial layer lattice-matched to GaN for the fabrication of air-gap photonic structures. It is used to demonstrate high quality factor (Q) microdisk cavities. Whispering gall ...

The authors report on the demonstration of strong light-matter coupling at room temperature using a crack-free UV microcavity containing GaN/AlGaN quantum wells (QWs). Lattice-matched AlInN/AlGaN distributed Bragg reflectors (DBRs) with a maximum peak refl ...

The authors report on strategies to achieve lasing in electrically driven vertical cavity surface emitting lasers at room temperature, namely the improvement of the quality factor of a microcavity suited for electrical injection, the use of a ZnO contact t ...

P-type AlInN layers lattice-matched to GaN are achieved by Mg doping. The net acceptor concentration N-A-N-D is 5 x 10(18) cm(-3) at a Mg concentration [Mg] of similar to 2 x 10(19) cm(-3). Mg acceptors are partly compensated and one of the compensating de ...

We report on III-nitride waveguides with c-plane GaN/(Al,Ga)N quantum wells in the strong light-matter coupling regime supporting propagating polaritons. They feature a normal-mode splitting as large as 60 meV at low temperatures thanks to the large overla ...

Nitride blue lasers including an AlInN cladding lattice matched to GaN were fabricated. Lasing at 415nm is observed at 300K with a threshold current density of 7.5kA/cm(2) and a peak power of 140mW at 1.2A. (C) 2009 Optical Society of America ...

When the carrier density is increased in a semiconductor, according to the predictions of Sir Nevil Mott, a transition should occur from an insulating state consisting of a gas of excitons to a conductive electron-hole plasma. This crossover, usually refer ...

Raphaël Butté

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Narrow UV emission from homogeneous GaN/AlGaN quantum wells

On the influence of the buffer layer on the optical quality of AlN-on-sapphire epilayers for photonic integrated devices

Crack-free highly reflective AlInN/AlGaN bragg mirrors for UV applications

InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells

Relative intensity noise and emission linewidth of polariton laser diodes

Spontaneous polarization buildup in a room-temperature polariton laser

Room temperature polariton lasing in a GaN/AlGaN multiple quantum well microcavity

LIGHT-EMITTING DIODES Solid-state lighting on glass

High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers

Room temperature polariton luminescence from a GaN/AlGaN quantum well microcavity

Towards room temperature electrically pumped blue vertical cavity surface emitting lasers

Mg doping for p-type AlInN lattice-matched to GaN

Propagating Polaritons in III-Nitride Slab Waveguides

GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer

Biexcitonic molecules survive excitons at the Mott transition