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Raphaël Butté

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Related publications (105)

Nonpolar GaN-based microcavity using AlN/GaN distributed bragg reflector

Denis Martin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Tiankai Zhu

Nonpolar GaN based microcavity (MC) made of a bottom AlN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO2/SiNx DBR has been fabricated on a-plane GaN template. The 13 pair AlN/GaN DBR, centered around 372 nm, exhibits a peak reflectivity of ...

2008

Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime

Jean-François Carlin, Pierre Stadelmann, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Antonino Francesco Castiglia, Anas Mouti

An AlInN/AlGaN microcavity (MC) containing a GaN/Al0.2Ga0.8N multiple quantum well (MQW) structure is investigated through room temperature (RT) photoluminescence and reflectivity experiments. A vacuum Rabi splitting as large as 50 meV at RT is reported fo ...

2008

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia

A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guid ...

2008

Narrow UV emission from homogeneous GaN/AlGaN quantum wells

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov

The authors report on the achievement of narrow ultraviolet emission using GaN/AlGaN quantum wells grown by metal organic vapor phase epitaxy. The origin of the inhomogeneous broadening of the emission is explained by means of micro-photoluminescence and a ...

2007

Efficient current injection scheme for nitride vertical cavity surface emitting lasers

Jean-François Carlin, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov, Antonino Francesco Castiglia

The authors report the realization of InGaN/GaN light emitting diodes (LEDs) with an electrical injection design suitable for vertical cavity surface emitting lasers. Controlled oxidation of an AlInN interlayer lattice matched to GaN allows confining the i ...

2007

Room-temperature polariton lasing in semiconductor microcavities

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann

We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN microcavities in the strong-coupling regime. Nonresonant pulsed optical pumping produces rapid thermalization and yields a clear emission threshold of 1 mW, co ...

2007

Growth mode induced carrier localization in InGaN/GaN quantum wells

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Nicolas Grandjean, Raphaël Butté, Eric Feltin

The growth of InGaN quantum wells ( QWs) by metal-organic vapour phase epitaxy is investigated by atomic force microscopy ( AFM). It is shown that for low growth temperatures the surface morphology of the thin InGaN well layer ( 1.5 nm) exhibits a meanderi ...

2007

Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Mauro Mosca, Dobri Simeonov, Tiankai Zhu, Antonino Francesco Castiglia

The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering ga ...

2007

a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy

Denis Martin, Nicolas Grandjean, Raphaël Butté, Tiankai Zhu

Thin a-plane (1 1 2 0) GaN layers have been grown on r-plane (1 1 0 2) sapphire substrates by hydride vapor phase epitaxy (HVPE), using either a single-step high-temperature (HT) growth or a two-step growth method similar to that of metal organic vapor pha ...

2007

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Jean-François Carlin, Marcel Py, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Sylvain Nicolay, Mauro Mosca, Dobri Simeonov, Gabriel Christmann, Antonino Francesco Castiglia, Marcus Gonschorek

We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the g ...

2007

Strain relaxation of AlN epilayers Stranski-Krastanov GaN/AlN quantum dots grown by organic vapor phase epitaxy

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov

We report a study of self-assembled GaN/AlN quantum dots (QDs) grown by metalorganic vapor phase epitaxy. We have investigated the impact of the AlN template quality on the nucleation of QDs obtained by the so-called Stranski-Krastanov growth mode transiti ...

2007

Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions

Jean-François Carlin, Marc Ilegems, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Sylvain Nicolay, Mauro Mosca

Intersubband (lSB) optical absorption in different nitride-based heterostructures grown by metal-organic chemical vapour deposition (MOCVD) is reported. The role of indium in AlInN/GaN multi-quantum wells (MQWs) is investigated. At high concentration (15%) ...

Wiley2007

Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure

Jean-François Carlin, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Antonino Francesco Castiglia

Laser action with low threshold average pump power density (similar to 50 W. cm(-2)) at room temperature is reported for a crack-free planar vertical cavity surface emitting laser (VCSEL) structure based on a bottom lattice-matched AllnN/GaN distributed Br ...

2007

Room temperature polariton luminescence from a GaN/AlGaN quantum well microcavity

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Mauro Mosca, Gabriel Christmann

The authors report on the demonstration of strong light-matter coupling at room temperature using a crack-free UV microcavity containing GaN/AlGaN quantum wells (QWs). Lattice-matched AlInN/AlGaN distributed Bragg reflectors (DBRs) with a maximum peak refl ...

2006

High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates

Marc Ilegems, Denis Martin, Nicolas Grandjean, Raphaël Butté

The growth by hydride vapor phase epitaxy (HVPE) of high quality thin GaN layers (d=8 mu m) on c-plane sapphire substrates with dislocation densities lower than 2x10(8) cm(-2) is demonstrated using a two-step process similar to that of metal organic vapor ...

2006

Crack-free highly reflective AlInN/AlGaN bragg mirrors for UV applications

Jean-François Carlin, Marc Ilegems, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann

We report the growth of highly reflective distributed Bragg reflectors (DBRs) in the UV region using the Al0.85In0.15N/Al0.2Ga0.8N lattice-matched system. The DBRs were deposited on nearly strain-free Al0.2Ga0.8N templates to avoid strain-induced structura ...

2006

Room-temperature polariton luminescence from a bulk GaN microcavity

Jean-François Carlin, Marc Ilegems, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Mauro Mosca, Gabriel Christmann

We report strong exciton-photon coupling at room temperature in a hybrid high quality bulk 3 lambda/2 GaN cavity with a bottom lattice-matched AlInN/AlGaN distributed Bragg reflector through angle-resolved polarized photoluminescence (PL). Coupling of the ...

2006

Stranski-Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy

Jean-François Carlin, Marc Ilegems, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov

We report a thorough study of the growth of self-assembled GaN/AlN quantum dots (QDs). These QDs were grown on sapphire substrates using the Stranski-Krastanov (SK) growth mode by means of low-pressure metal organic vapor phase epitaxy. The influence of th ...

2006

Impact of inhomogeneous excitonic broadening on the strong exciton-photon coupling in quantum well nitride microcavities

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann

GaN/AlGaN and InGaN/GaN quantum wells (QWs) are investigated as the active region for room-temperature strong exciton-photon coupling in high-quality AlInN/(Al)GaN microcavities (MCs). Angular resolved photoluminescence (PL) measurements performed on an Al ...

2006

Impact of disorder on high quality factor III-V nitride microcavities

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov, Gabriel Christmann

The authors report on the micron scale characterization of a monolithic GaN microcavity (MC) with lattice matched AlInN/GaN distributed Bragg reflectors by means of a microtransmission setup. This technique allows extracting very high quality factors (Q up ...

2006

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