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Ananda Sankar Roy

Cette personne a quitté l’EPFL

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Publications associées (31)

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Noise and small-signal modeling of nanoscale MOSFETs

Ananda Sankar Roy

After years of intensive research effort, the design of RF integrated circuits in CMOS has now reached a wide acceptance for industrial designs. This is due to the high unity gain frequency and low-noise performance of today's deep sub micrometer MOS trans ...

EPFL2007

Noise Modeling Methodologies in the Presence of Mobility Degradation and their Equivalence

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

Institute of Electrical and Electronics Engineers2006

Charge, Current, and Noise Partitioning in MOSFET in the Presence of Mobility Degradation

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

The Ward-Dutton (WD) partitioning scheme is used extensively to develop transient and high-frequency advanced compact models in MOSFET analysis. However, it remains an open question if this scheme can be used for field-dependent mobility that is enhanced i ...

Institute of Electrical and Electronics Engineers2006

Partitioning Schemes in the Lateral Asymmetric MOST

Mihai Adrian Ionescu, Christian Enz, Jean-Michel Sallese, Michel Declercq, Ananda Sankar Roy, Yogesh Singh Chauhan

Lateral asymmetric MOSFET, which has longitudinal doping variation in the channel, is the core of high voltage MOSFET. Recently it has been recognized that capacitance property of this kind of device is fundamentally different from conventional MOST becaus ...

2006

Compact Modeling of Thermal Noise in the MOS Transistor

Christian Enz, Ananda Sankar Roy

Although some of the recently proposed compact models for thermal noise in MOS transistors exhibit a good match with experimental data, we believe most of the existing compact models suffer from incorrect physical assumptions or modeling (e.g., absence of ...

2005

Impact of Lateral Asymmetry of MOSFETs on the Gate and Drain Noise Correlation

Christian Enz, Ananda Sankar Roy

Recent studies of Lim et al. have shown that channel engineering can effectively be used to globally improve the device noise performance. This happens because the doping profile can strongly impact the correlation between the drain and induc ...

2008

Source–Drain Partitioning in MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

The Ward-Dutton (WD) partitioning scheme [IEEE Trans. Electron Devices, vol. ED-27, p. 1571, Aug. 1980] is used extensively to develop transient and high-frequency advanced compact models for MOSFET devices. Recently, it has been shown that WD partitioning ...

2007

Noise Modeling in Lateral Nonuniform MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

In this paper, we present an analytical noise modeling methodology for lateral nonuniform MOSFET. We demonstrate that the noise properties of lateral nonuniform MOSFETs are considerably different from the prediction obtained with the conventional Klaassen- ...

2007

Analytical Modeling of Large-Signal Cyclo-Stationary Low-Frequency Noise With Arbitrary Periodic Input

Christian Enz, Ananda Sankar Roy

Low-frequency (LF) noise under cyclo-stationary excitation has received considerable attention recently. Until now, only semiempirical models for cyclo-stationary random telegraph signal (RTS) and flicker noise have been reported in the literature. In this ...

2007

Generalized Source/Drain Partitioning in MOSFET

Christian Enz, Ananda Sankar Roy

2006

Measurement of the inclusive and differential t(t)over-bar gamma cross sections in the dilepton channel and effective field theory interpretation in proton-proton collisions at root s=13 TeV

Olivier Martin, Ian Smith, Matthias Finger, Richard Pitts, Miguel Fernández Ruiz, Sun Hee Kim, Jean-François Carlin, Jian Zhao, Arvind Shah, Chao Wang, Melody Swartz, Yi Zhang, Dalziel Joseph Wilson, Hoài-Minh Nguyên, Pedro Camilo de Oliveira e Silva, Alberto Hernando de Castro, João Miguel das Neves Duarte, Rakesh Chawla, Myun Sik Kim, Tian Cheng, Thomas Mountford, Yixing Chen, Ananda Sankar Roy, Varun Sharma, Bertrand François, Josef Andreas Schuler, Aravind Kumar Chandiran, Yogesh Singh Chauhan, Jae-Woo Choi, Jin Won Seo, Joo Yeon Kim, Wei Sun, Xiaoqiang Wang, Kyumin Lee, Muhammad Aiman Bin Rahmanudin Hamdan, Chia-Chun Chen, Randoald Müller, Alexis Kalogeropoulos, Jung Eung Park, Ana Margarida Da Costa Ricardo, Sebastian James Davis, Melissa Catherine Olson, Christoph Ernst René Schäfer, Adam Wade Marcus, Johannes Steen, Adrien Alexis Paul Chauvet, Hoang-Trang Lam, Maria Isabel Cordero Campana, Carlos Andres Peña Reyes, Justin Terence Notz Pekkanen, Cristopher Ariel Zeballos Avila

The production cross section of a top quark pair in association with a photon is measured in proton-proton collisions in the decay channel with two oppositely charged leptons (e(+/-)mu(-/+), e(+)e(-), or mu(+)mu(-)). The measurement is performed using 138 ...

Springer Nature2022

Theory of Source-Drain Partitioning in MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2007

A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2005

A Charge-Based Compact Model of Double Gate MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2006

A Closed-form Charge-based Expression for Drain Current in Symmetric and Asymmetric Double Gate MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2006

A Design Oriented Charge-based Current Model for Symmetric DG MOSFET and its Correlation with the EKV Formalism

Christian Enz, Jean-Michel Sallese, François Krummenacher, Ananda Sankar Roy

We propose a design oriented charge-based model for undoped DG MOSFETs under symmetrical operation that aims at giving a comprehensive understanding of the device from the design strategy. In particular, we introduce useful normalizations for current and c ...

2005

Compact modeling of anomalous high frequency behavior of MOSFET's small-signal NQS parameters in presence of velocity saturation

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2005

Ananda Sankar Roy

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Noise and small-signal modeling of nanoscale MOSFETs

Noise Modeling Methodologies in the Presence of Mobility Degradation and their Equivalence

Charge, Current, and Noise Partitioning in MOSFET in the Presence of Mobility Degradation

Partitioning Schemes in the Lateral Asymmetric MOST

Compact Modeling of Thermal Noise in the MOS Transistor

Impact of Lateral Asymmetry of MOSFETs on the Gate and Drain Noise Correlation

Source–Drain Partitioning in MOSFET

Noise Modeling in Lateral Nonuniform MOSFET

Analytical Modeling of Large-Signal Cyclo-Stationary Low-Frequency Noise With Arbitrary Periodic Input

Generalized Source/Drain Partitioning in MOSFET

Measurement of the inclusive and differential t(t)over-bar gamma cross sections in the dilepton channel and effective field theory interpretation in proton-proton collisions at root s=13 TeV

Theory of Source-Drain Partitioning in MOSFET

A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET

A Charge-Based Compact Model of Double Gate MOSFET

A Closed-form Charge-based Expression for Drain Current in Symmetric and Asymmetric Double Gate MOSFET

A Design Oriented Charge-based Current Model for Symmetric DG MOSFET and its Correlation with the EKV Formalism

Validity of the Flat Band Perturbation Technique in Non-ohmic Region

Critical Discussion on the Flatband Perturbation Technique for Calculating Low-Frequency Noise

On The Compact Modelling of Induced Gate Noise in the MOS Transistor

Compact modeling of anomalous high frequency behavior of MOSFET's small-signal NQS parameters in presence of velocity saturation