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Nicolas Grandjean

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Related publications (239)

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Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

We address degradation aspects of lattice-matched unpassivated InAlN/GaN high-electron-mobility transistors (HEMTs). Stress conditions include an off-state stress, a semi-on stress (with a partially opened channel), and a negative gate bias stress (with so ...

2009

Near ultraviolet photonic integrated lasers based on silicon nitride

Tobias Kippenberg, Nicolas Grandjean, Junqiu Liu, Rui Ning Wang, Johann Emmeram Riemensberger, Anat Siddharth, Andrey Voloshin, Grigorii Likhachev, Camille Haller

Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic integrated resonators hav ...

AIP Publishing2022

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

Nicolas Grandjean, Jean-François Carlin, Camille Haller

Defects can significantly modify the electro-optical characteristics of InGaN light-emitting diodes (LEDs); however, modeling the impact of defects on the electrical characteristics of LEDs is not straightforward. In this paper, we present an extensive inv ...

IOP PUBLISHING LTD2021

Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

Crack-free lattice-matched Al0.85In0.15N/GaN heterostructures were grown on sapphire substrates with barrier thicknesses up to 100 nm which exhibit very high polarization-induced electron sheet density (>2.5 x 10(13) cm(-2)) located at the heterointerface. ...

EDP Sciences2009

Growth mode induced carrier localization in InGaN/GaN quantum wells

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-François Carlin, Jean-Daniel Ganière, Eric Feltin, Raphaël Butté

The growth of InGaN quantum wells ( QWs) by metal-organic vapour phase epitaxy is investigated by atomic force microscopy ( AFM). It is shown that for low growth temperatures the surface morphology of the thin InGaN well layer ( 1.5 nm) exhibits a meanderi ...

2007

Decoupling Interlayer Spacing and Cation Dipole on Exciton Binding Energy in Layered Halide Perovskites

Rosario Scopelliti, Nicolas Grandjean, Kevin Sivula, Jun Ho Yum, Yeonju Kim, Simon Nussbaum, Han-Hee Cho, Danxuan Chen

Layered halide perovskites (LHPs) are emerging semiconductor materials due to their superior environmental stability compared to that of traditional halide perovskites. While LHPs have tunable optoelectronic properties, quantum and dielectric confinement e ...

2024

Stress-modulated composition in the vicinity of dislocations in nearly lattice matched AlxIn1-x N/GaN heterostructures: A possible explanation of defect insensitivity

Nicolas Grandjean, Jean-François Carlin, Pierre Stadelmann, Marco Cantoni, Eric Feltin, Anas Mouti

Evidence of composition fluctuations around threading dislocations at scales ranging from atomic distances to tens of nanometers is provided by z-contrast imaging, strain measurement, and energy dispersive x-ray spectroscopy in AlxIn1-x N/GaN heterostructu ...

2011

Pressure-induced piezoelectric effects in near-lattice-matched GaN/AlInN quantum wells

Nicolas Grandjean, Eric Feltin

Near-lattice-matched GaN/AlInN multiple quantum wells (MQWs) are investigated by means of the diamond anvil cell high-pressure technique. The hydrostatic pressure dependence of the photoluminescence dE(PL)/dp and the variation in the PL peak energy with th ...

2008

Near infrared absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metal-organic vapor-phase epitaxy

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Sylvain Nicolay

We report on intersubband absorption of near infrared radiation in AlN/GaN superlattice structures grown by metal-organic vapor-phase epitaxy. A good correlation between well thickness and absorption peak energy was obtained. One sample shows a photovoltai ...

2006

Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon

Romuald Houdré, Nicolas Grandjean, Jean-François Carlin, Vincenzo Savona, Matteo Galli, Momchil Minkov, Mohamed Sabry Abdel-Aliem Mohamed

We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG) and third harmonic generation (THG) in suspended gallium nitride slab photonic crystal (PhC) cavities on silicon, under continuous-wave resonant excitat ...

2017

Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

Compared to the AlGaN alloy, which can only be grown under tensile strain on GaN, the AlInN alloy is predicted by Vegard's law to be lattice-matched (LM) on fully relaxed GaN templates for an indium content of similar to 17.5%, i.e., it can be grown either ...

2008

Role of stable and metastable Mg-H complexes in p-type GaN for cw blue laser diodes

Nicolas Grandjean, Jean-François Carlin, Antonino Francesco Castiglia

Secondary ion mass spectroscopy (SIMS) and capacitance-voltage measurements were combined to thoroughly study Mg doping in GaN layers grown by metal organic vapor phase epitaxy. First we found that the Mg steady-state incorporation regime occurs for a surf ...

AIP American Institute of Physics2011

Spin relaxation of free excitons in narrow GaN/AlxGa1-xN quantum wells

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté

By performing pump-probe experiments, we study the relaxation dynamics of spin-polarized excitons in a wurtzite GaN/AlGaN quantum well (QW)grown by metal organic vapor phase epitaxy. The circular degree of polarization of the differential reflectivity sign ...

2010

Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

Nicolas Grandjean, Jean-François Carlin

The Ni/Al2O3/InAlN/AlN/GaN metal-oxide-semiconductor heterostructure (MOS-H) is investigated using capacitance-voltage and capacitance-time characteristics in the temperature range of 25-300 degrees C. An anomalous positive voltage shift of the capacitance ...

2009

Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Eric Feltin, Sylvain Nicolay

We report on a dramatic improvement of the optical and structural properties of AlN/GaN multiple quantum wells (MQWs) grown by metal-organic vapor-phase epitaxy using indium as a surfactant. This improvement is observed using photoluminescence as well as x ...

2006

Broadband blue superluminescent light-emitting diodes based on GaN

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Gatien Cosendey, Luca Alex Milo Sulmoni

We report on the achievement of III-nitride blue superluminescent light-emitting diodes on GaN substrates. The epitaxial structure includes an active region made of In0.12Ga0.88N quantum wells in a GaN/AlGaN waveguide. Superluminescence under cw operation ...

2009

Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature

Davide Maria Di Paola, Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Joachim Armand Simonne Ciers

Ultrafast nonlinear photonics enables a host of applications in advanced on-chip spectroscopy and information processing. These rely on a strong intensity dependent (nonlinear) refractive index capable of modulating optical pulses on sub-picosecond timesca ...

Nature Research2021

94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

Nicolas Grandjean, Jean-François Carlin, Marco Malinverni, Lorenzo Lugani

We report the first 94-GHz (W-band) large-signal performance of AlInN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon (111) substrates. A maximum output power density of 1.35 W/mm and peak power-added-efficiency of 12% are ...

Institute of Electrical and Electronics Engineers2015

Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al-rich Al1-xInxN films grown on sapphire

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

The lattice parameters and strain evolution in Al1-xInxN films with 0.07

2008

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Nicolas Grandjean, Eric Feltin, Denis Martin, Julien Dorsaz, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy

We demonstrate state-of-the-art p-type (Al) GaN layers deposited at low temperature (740 degrees C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGa ...

Amer Inst Physics2014