Publications de Andras Kis | EPFL Graph Search

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Strain is a proven technique for modifying the bandgap and enhancing carrier mobility in 2D materials. Most current strain engineering techniques rely on the post‐growth transfer of these atomically thin materials from growth substrates to target surfaces, limiting their integration into nanoelectronics. Here, we present a new approach where strain in 2D materials is already introduced directly during their growth on grayscale‐patterned topographies instead of flat surfaces. Both strain levels and orientati

During their production, single-walled carbon nanotubes form bundles. Owing to the weak van der Waals interaction that holds them together in the bundle, the tubes can easily slide on each other, resulting in a shear modulus comparable to that of graphite. This low shear modulus is also a major obstacle in the fabrication of macroscopic fibres composed of carbon nanotubes. Here, we have introduced stable links between neighbouring carbon nanotubes within bundles, using moderate electron-beam irradiation ins

We give here an overview on our results on the large-area growth of 2D transition metal dichalcogenide semiconductors MoS2, MoSe2, WSe2 using chemical vapor deposition. The growth of MoS2 on sapphire occurs epitaxially with the crystalline orientation of t ...

The fascinating properties of graphene, the first two-dimensional (2D) material, and the accompanying strong activity in the research community have sparked a renewed interest in related layered crystalline materials with unique electronic and optical prop ...

Two-dimensional flat-band systems have recently attracted considerable interest due to the rich physics unveiled by emergent phenomena and correlated electronic states at van Hove singularities. However, the difficulties in electrically detecting the flat- ...

Long-term stability of high-and low-resistance states in full-organic ferroelectrically gated graphene transistors is an essential prerequisite for memory applications. Here, we demonstrate high retention performance for both memory states with fully satur ...

Devices have been fabricated based on the bilayer manganite La1.4Sr1.6Mn2O7, which in the bulk state orders magnetically below 90 K, at which point both in-plane and c-axis bulk resistivity decrease by 2-3 orders of magnitude. We provide an optimized proce ...

The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-me ...

Single-layer transition metal dichalcogenide WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band gap. Due to low doping levels, it is intrinsic and shows ambipolar transport. This opens up the possibility to r ...

Two-dimensional (2D) semiconductors such as mono and few-layer molybdenum disulphide (MoS2) are very promising for integration in future electronics as they represent the ultimate miniaturization limit in the vertical direction. While monolayer MoS2 attrac ...

Transition-metal dichalcogenide bilayers exhibit a rich exciton landscape including layer-hybridized excitons, i.e. excitons which are of partly intra- and interlayer nature. In this work, we study hybrid exciton-exciton interactions in naturally stacked W ...

Conventional floating-gate (FG) transistors (made with Si/poly-Si) that form the building blocks of the widely employed nonvolatile flash memory technology face severe scaling challenges beyond the 12-nm node. In this paper, for the first time, a comprehen ...

The absorption spectra of 2D semiconductors are dominated by excitons with binding energy of several hundreds of meV. Nevertheless, even single layers show an appreciable photovoltaic effect and work as the active material in high sensitivity photodetector ...

We have determined the mechanical anisotropy of a single microtubule by simultaneously measuring the Young's and the shear moduli in vitro. This was achieved by elastically deforming the microtubule deposited on a substrate tailored by electron-beam lithography with a tip of an atomic force microscope. The shear modulus is 2 orders of magnitude lower than the Young's, giving rise to a length-dependent flexural rigidity of microtubules. The temperature dependence of the microtubule's bending stiffness in the

Atomic-scale disorder in two-dimensional transition metal dichalcogenides is often accompanied by local magnetic moments, which can conceivably induce long-range magnetic ordering into intrinsically non-magnetic materials. Here, we demonstrate the signatur ...

Among numerous thin film synthesis methods, metalorganic chemical vapor deposition performed in a showerhead reactor is the most promising one for broad use in scalable and commercially adaptable two-dimensional material synthesis processes. Adapting the m ...

Graphene is not the only prominent example of two-dimensional (2D) materials. Due to their interesting combination of high mechanical strength and optical transparency, direct bandgap and atomic scale thickness transition-metal dichalcogenides (TMDCs) are ...

Two-dimensional materials are an emerging class of new materials with a wide range of electrical properties and potential practical applications. Although graphene(1) is the most well-studied two-dimensional material, single layers of other materials, such ...

Graphene is very popular because of its many fascinating properties, but its lack of an electronic bandgap has stimulated the search for 2D materials with semiconducting character. Transition metal dichalcogenides (TMDCs), which are semiconductors of the t ...

Hexagonal boron nitride (hBN) has emerged as a promising material platform for nanophotonics and quantum sensing, hosting optically active defects with exceptional properties such as high brightness and large spectral tuning. However, precise control over ...

Andras Kis

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Engineered Strain in 2D Materials by Direct Growth on Deterministically Patterned Grayscale Topographies

Reinforcement of single-walled carbon nanotube bundles by intertube bridging

High-quality Synthetic 2D Transition Metal Dichalcogenide Semiconductors

MoS2 and semiconductors in the flatland

Electrical detection of the flat-band dispersion in van der Waals field-effect structures

Long-term retention in organic ferroelectric-graphene memories

Micro-fabrication process for small transport devices of layered manganite

Logic-in-memory based on an atomically thin semiconductor

Electron and Hole Mobilities in Single-Layer WSe2

Thickness-dependent mobility in two-dimensional MoS2

Electrically tunable dipolar interactions between layer-hybridized excitons

Can 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory?

Field-induced charge separation dynamics in monolayer MoS2

Nanomechanics of Microtubules

Probing magnetism in atomically thin semiconducting PtSe2

Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD

Electronic properties of transition-metal dichalcogenides

Ultrasensitive photodetectors based on monolayer MoS2

2D transition metal dichalcogenides

Engineering Optically Active Defects in Hexagonal Boron Nitride Using Focused Ion Beam and Water