Publications de Jean-Michel Sallese

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Minority carriers diffusion currents are particularly important in parasitic substrate couplings of Smart Power ICs. In CMOS technologies the P-substrate potential is imposed by P+ contacts and N-wells by N+ highly doped implantations. The doping concentra ...

In this paper, we have used the partially depleted SOI MOSFET to measure the intensity of light. The charge pumping technique was used to get rid of the photogenerated carriers in the body in an attempt to keep the drain current constant. Using this techni ...

In this paper we report the results of Monte-Carlo simulations performed on double-gate ballistic MOSFETs with a geometry such that the gates overlap only a fraction of the channel. We present a qualitative analysis of the simulation results highlighting t ...

This paper presents a modeling methodology for substrate current coupling mechanisms. An enhanced model of the diode ensuring continuity of minority carriers is used to build an equivalent schematic, accounting for minority and majority carrier propagation ...

This paper presents a new modeling methodology accounting for generation and propagation of minority carriers that can be used directly in circuit-level simulators in order to estimate coupled parasitic currents. The model is based on a new compact model o ...

High voltage CMOS active devices inherently have a parasitic vertical bipolar transistor. The parasitic PNP structure can be activated during high-power switching operation causing a potential shift of the substrate. In this work a spice-modeling approach ...

Several Hall sensor configurations have been integrated in CMOS technology and analyzed in terms of offset at room temperature and offset drift. We looked for the best geometry that would minimize the offset and its drift. The targeted specification was 30 ...

A time-resolved multi-gate ion sensitive field effect transducer, including a silicon layer, a P-doped region in the silicon layer and a first electrode in electric connection with the P doped region, a N-doped region in the silicon layer and a second elec ...

In response to the 2013 Update of the European Strategy for Particle Physics (EPPSU), the Future Circular Collider (FCC) study was launched as a world-wide international collaboration hosted by CERN. The FCC study covered an energy-frontier hadron collider ...

We present the latest developments and some preliminary results on High-Voltage MOSFET modelling at EPFL. A novel physics-based compact model is derived for the drift region. It includes velocity saturation and Poisson equation in a self consistent formalism. Next, this drift extension has been combined with a non-uniformly doped MOSFET compact model for the low voltage section of the device. The complete model has been implemented in Verilog-A language. Evaluation against TCAD simulations and actual measur

Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-r ...

In this paper, we propose an approximate solution to solve the two dimensional potential distribution in ultra-thin body junctionless double gate MOSFET (JL DG MOSFET) operating in the subthreshold regime. Basically, we solved the 2D-Poisson equation along ...

We report preliminary measurements of transient drain current undershoot with time constants of the order of milliseconds in thick and highly doped n-type junctionless fieldeffect transistors. This effect might be attributed to a process involving generati ...

Wafer bonding is an established technology for the manufacturing of silicon-on-insulator (SOI) substrates, microelectromechanical systems (MEMS) and microfluidic devices. Low temperature direct bonding techniques can be of particular interest for the fabri ...

In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order Delta-sigma modul ...

We have calculated the effect of alloy interdiffusion on the one-dimensional energy confinement of (Al,Ga)As/GaAs crescent shaped quantum wire structures. We show that the energy splitting between excited states may be greatly enhanced by the interdiffusion mechanism. (C) 1995 American Institute of Physics.

In order to provide the information on their Hall voltage, sensitivity and drift with temperature, a new simpler lumped circuit model for the evaluation of various Hall Effect sensors has been developed. In this sense, the finite element model associated c ...

Jean-Michel Sallese

Chattez avec Graph Search

Impact of enhanced contact doping on minority carriers diffusion currents

Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

Role of the gate in ballistic nanowire SOI MOSFETs

Modeling methodology of high-voltage substrate minority and majority carrier injections

A circuit-level substrate current model for smart-power ICs

Modeling Parasitic Vertical PNP in HVCMOS

Geometrical parameters influence on the Hall effect sensors offset and drift

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

HE-LHC: The High-Energy Large Hadron Collider Future Circular Collider Conceptual Design Report Volume 4

Recent Developments on the EPFL-High Voltage MOSFET Model (EPFL-HVMOS)

A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET

A Closed-Form Charge-Based Expression for Drain Current in Symmetric and Asymmetric Double Gate MOSFET

A Closed-form Charge-based Expression for Drain Current in Symmetric and Asymmetric Double Gate MOSFET

Comparative Study on the Performance of Five Different Hall Effect Devices

Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime

Transient Off-Current in Junctionless FETs

Transient current technique for charged traps detection in silicon bonded interfaces

Optical sensor using a floating body SOI MOSFET in the Delta-sigma loop

Interdiffusion Induced Enhancement of One-Dimensional Level Separation in Quantum Wires

Temperature Influence Investigation on Hall Effect Sensors Performance Using a Lumped Circuit Model