Recherche

Afficher tous les résultats pour

Accueil

Personne

Jean-Michel Sallese

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (155)

A circuit-level substrate current model for smart-power ICs

Maher Kayal, François Krummenacher, Jean-Michel Sallese, Marc Pastre, Fabrizio Lo Conte

This paper presents a new modeling methodology accounting for generation and propagation of minority carriers that can be used directly in circuit-level simulators in order to estimate coupled parasitic currents. The method is based on a new compact model ...

Institute of Electrical and Electronics Engineers2010

Modeling methodology of high-voltage substrate minority and majority carrier injections

Maher Kayal, Jean-Michel Sallese, Fabrizio Lo Conte

This paper presents a modeling methodology for substrate current coupling mechanisms. An enhanced model of the diode ensuring continuity of minority carriers is used to build an equivalent schematic, accounting for minority and majority carrier propagation ...

2010

Global modeling strategy of parasitic coupled currents induced by minority-carrier propagation in semiconductor substrates

Maher Kayal, François Krummenacher, Jean-Michel Sallese, Marc Pastre, Fabrizio Lo Conte

This paper presents a modeling strategy to simulate the propagation of electrical perturbations induced by direct biasing of substrate junctions. Usually, this is done by identifying parasitic substrate devices such as bipolar transistors. However, mapping ...

2010

Measurement and Performance Evaluation of a Silicon On Insulator Pixel Matrix

Maher Kayal, Jean-Michel Sallese, Louis Harik

A new technique for driving silicon-on-insulator pixel matrixes has been proposed in [1], which was based on transient charge pumping for evacuating the extra photogenerated charges from the body of the transistor. An 8x8 pixel matrix was designed and fabr ...

2010

The Equivalent-Thickness Concept for Doped Symmetric DG MOSFETs

Christophe Lallement, Jean-Michel Sallese

In this paper, we propose to derive an analytical model for the doped symmetric double-gate (DG) MOSFET that is valid in all regions of operation. We show that doping the silicon channel can be converted in an equivalent silicon thickness and threshold vol ...

2010

Explicit Compact Model for Ultranarrow Body FinFETs

Christophe Lallement, Jean-Michel Sallese

An explicit charge-based compact model for lightly doped FinFETs is proposed. This design-oriented model is valid and continuous in all operating regimes (subthreshold, linear, and saturation) for channel lengths (L) down to 25 nm, Fin widths (W-Si) down t ...

2009

Novel chemico-mechanical approach towards long-term implantable glucose sensing

Jean-Michel Sallese, Peter Ryser, Eric Meurville, Christophe Boss

The proof of concept of a continuously sensing affinity device based on the glucose-dependent viscosity of a sensitive solution containing dextran and Concanavalin A has been successfully demonstrated. The biosensor incorporates a piezoelectric diaphragm a ...

Elsevier2009

SOI Pixel Based on a Floating Body Partially Depleted MOSFET in a Delta-Sigma Loop

Maher Kayal, Jean-Michel Sallese, Louis Harik

Standard techniques used for measuring the photocurrent of an SOI phototransistor have failed due to two main reasons: the first being the low signal-to-noise ratio and the second being the slow transient. In this paper, the partially depleted silicon on i ...

Institute of Electrical and Electronics Engineers2009

A circuit-level substrate current model for smart-power ICs

Maher Kayal, François Krummenacher, Jean-Michel Sallese, Marc Pastre, Fabrizio Lo Conte

IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

SOI digital pixel sensor based on charge pumping

Maher Kayal, Jean-Michel Sallese, Louis Harik

In this paper, a digital pixel sensor in SOl is presented. The active part is a partially depleted Sol phototransistor. The technique elaborated in [I] was designed and implemented. Moreover, we took advantage of some of the characteristics of the floating ...

IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Viscosimetric biosensor for monitoring analyte levels

Jean-Michel Sallese, Eric Meurville

The invention relates to a viscosimetric sensor for monitoring an analyte level in a patient or in body fluids ex vivo. In particular, the invention relates to a sensor for monitoring analytes, such as glucose levels in a patient. The sensor comprises at l ...

2009

Global 2D modeling of minority and majority substrate coupled currents

Maher Kayal, François Krummenacher, Jean-Michel Sallese, Marc Pastre, Fabrizio Lo Conte

This paper presents a modeling strategy to simulate 2D propagation of electrical perturbations induced by direct biasing of substrate junctions. Identifying parasitic substrate devices such as bipolar transistors reaches rapidly its limit when multiple cur ...

2009

Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects

François Krummenacher, Christophe Lallement, Jean-Michel Sallese

A physics-based compact model including short-channel effects (SCEs) is presented for undoped (or lightly doped) symmetric double-gate (DG) MOSFETs. Our approach allows an accurate description of the device behavior down to 60 nm with a simple set of equat ...

2008

Optical sensor using a floating body SOI MOSFET in the Delta-sigma loop

Maher Kayal, Jean-Michel Sallese, Louis Harik

In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order Delta-sigma modul ...

2008

Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET

Maher Kayal, Jean-Michel Sallese, Louis Harik

In this paper, we present a new method to measure light intensity in a floating body partially depleted SOI MOSFET. The photo-generated charge density in the MOSFET is converted into a charge pumping frequency needed to maintain the drain current at a cons ...

2008

Delta-sigma loop based on charge pumping in SOI optical sensor

Maher Kayal, Jean-Michel Sallese, Louis Harik

2008

Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

Maher Kayal, Jean-Michel Sallese, Louis Harik

In this paper, we have used the partially depleted SOI MOSFET to measure the intensity of light. The charge pumping technique was used to get rid of the photogenerated carriers in the body in an attempt to keep the drain current constant. Using this techni ...

2008

Noise Modeling in Lateral Nonuniform MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

In this paper, we present an analytical noise modeling methodology for lateral nonuniform MOSFET. We demonstrate that the noise properties of lateral nonuniform MOSFETs are considerably different from the prediction obtained with the conventional Klaassen- ...

2007

Theory of Source-Drain Partitioning in MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2007

Source–Drain Partitioning in MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

The Ward-Dutton (WD) partitioning scheme [IEEE Trans. Electron Devices, vol. ED-27, p. 1571, Aug. 1980] is used extensively to develop transient and high-frequency advanced compact models for MOSFET devices. Recently, it has been shown that WD partitioning ...

2007

Page 7 sur 8