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In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order Delta-sigma modulator. Measured data show flux densities as low as 3mW/m2 and an SNR of 60 dB. ©2008 IEEE.
Danick Briand, Silvia Demuru, Jaemin Kim, Xi Chen, Brince Paul Kunnel