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Christian Enz

Cette personne a quitté l’EPFL

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Publications associées (213)

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Design and modeling of self-aligned nano-imprinted sub-micrometer pentacene-based organic thin-film transistors

Christian Enz, Jean-Michel Sallese, Rolando Ferrini, Randoald Müller, Frédéric Zanella, Nenad Marjanovic

Sub-micrometer channel length (0.5 mu m) organic thin-film transistors (OTFTs) are demonstrated using a process flow combining nano-imprint lithography (NIL) and self-alignment (SA). A dedicated test structure was designed and samples were fabricated on 4- ...

Elsevier2013

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Mihai Adrian Ionescu, Christian Enz, Farzan Jazaeri, Igor Stolichnov, Ali Saeidi

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...

Nature Research2019

A 2.4-GHz low complexity polar transmitter using dynamic biasing for IEEE 802.15.6

Christian Enz, Vladimir Kopta, Raghavasimhan Thirunarayanan

A 2.4 GHz polar transmitter compliant with the IEEE 802.15.6 standard is presented in this paper. A Linearized class-C power amplifier, employing dynamic biasing is used to minimize the adjacent channel interference and satisfy the defined spectrum mask re ...

IEEE2015

Modeling the Channel Charge and Potential in Quasi-Ballistic Nanoscale Double-Gate MOSFETs

Christian Enz, Jean-Michel Sallese, Anurag Mangla

In this paper, we present an analytical semiempirical model of the profile of the channel charge and potential in quasi-ballistic double-gate (DG) MOSFETs. The charge model is based on the premise of separating the charge density in the quasi-ballistic cha ...

Ieee-Inst Electrical Electronics Engineers Inc2014

A Design-oriented Charge-based Simplified Model for FDSOI MOSFETs

Christian Enz, Farzan Jazaeri, Alessandro Pezzotta

In this paper a design-oriented model for asymmetrical double-gate (ADG) MOSFETs is proposed. Including the back-gate effect into the original simplified EKV bulk model requires only one additional parameter to the existing four, and extends the simplified ...

2018

Charge-Based Distortion Analysis of Nanoscale MOSFETs

Christian Enz, Alessandro Pezzotta, Francesco Chicco

This paper presents a study of MOSFETs' linearity, exploiting a simplified version of the charge-based EKV model. It allows to deduce analytically the one-tone and two-tone harmonic distortions introduced by the nonlinear ID-VG MOSFET characteristic as a f ...

2018

Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs

Christian Enz, Claudio Bruschini, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

This paper investigates the radiation tolerance of 28-nm bulk n and pMOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of the complex int ...

2017

Noise Modeling in Lateral Nonuniform MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

In this paper, we present an analytical noise modeling methodology for lateral nonuniform MOSFET. We demonstrate that the noise properties of lateral nonuniform MOSFETs are considerably different from the prediction obtained with the conventional Klaassen- ...

2007

Combining Structural and Timing Errors in Overclocked Inexact Speculative Adders

Christian Enz, Vincent Frédéric Camus, Mattia Cacciotti

Worst-case design is used in IoT devices and high performance data centers to ensure reliability, leading to a power efficiency loss. Recently, approximate computing has been proposed to trade off accuracy for efficiency. In this paper, we use Inexact Spec ...

Ieee2017

TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Christian Enz

This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs with several channel lengths are irradiated up to 1 Grad(SiO2) and then annealed for 24 h at 100 degrees C. Irradia ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Analysis of Ultralow-Power Asynchronous ADCs

Christian Enz, Aravind Prasad Heragu Singaiyengar

In this paper, analysis of a novel class of A/D converters based on asynchronous delta modulation (DM) is presented and a high level model is realized for the same. Using the high level model, analytical expressions are derived for the calculation of the i ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2010

Energy-Efficient Digital Design Through Inexact and Approximate Arithmetic Circuits

Christian Enz, Vincent Frédéric Camus, Jérémy Lucien Maurice Schlachter

Inexact and approximate circuit design is a promising approach to improve performance and energy efficiency in technology-scaled and low-power digital systems. Such strategy is suitable for error tolerant applications involving perceptive or statistical ou ...

2015

Self-heating Effects in RF Region of FDSOI MOSFETs at Cryogenic Temperatures

Edoardo Charbon, Christian Enz, Hung-Chi Han

Radio-frequency (RF) circuits are crucial to qubit manipulation, for which transistor self-heating effects may influence performance and possibly change the quantum state. This paper presents an analytical RF model of FDSOI MOSFETs considering dynamic self ...

Institute of Electrical and Electronics Engineers (IEEE)2025

Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs

Christian Enz, Arnout Lodewijk M Beckers, Farzan Jazaeri

This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements. Dopant freezeout, ...

2020

Simple thermal noise estimation of OTA-based switched-capacitor filters

Christian Enz, François Krummenacher, Assim Boukhayma

This paper presents a new analytical method to simply estimate the integrated thermal noise in switched-capacitor filters (SCF). It is shown how the Bode theorem, which is theoretically valid only for continuous-time passive filters, can be extended to als ...

2015

Temporal Readout Noise Analysis and Reduction Techniques for Low-Light CMOS Image Sensors

Christian Enz, Assim Boukhayma

In this paper, an analytical noise calculation is presented to derive the impact of process and design parameters on 1/f and thermal noise for a low-noise CMOS image sensor (CIS) readout chain. It is shown that dramatic noise reduction is obtained by using ...

Institute of Electrical and Electronics Engineers2016

Design of Low-power Analog Circuits in Advanced Technology Nodes using the Gm/ID Approach

Simon Olivier Berner, Christian Enz, Hung-Chi Han

The Gm/ID approach has proven to be an efficient technique for the design of low-power analog circuits. Until now it was mostly demonstrated on older CMOS technology nodes. In this paper we will show that the Gm/ID methodology still holds for advanced tech ...

IEEE2023

On an Implementation of Differential and Quadrature Colpitts Injection-locked Frequency Dividers

Christian Enz, Uroschanit Yodprasit

2006

Compact Modeling of Anomalous High-Frequency Behavior of MOSFET's Small-Signal NQS Parameters in Presence of Velocity Saturation

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2006

A Short Story of the EKV MOS Transistor Model

Christian Enz

2008