Publications de Christian Enz | EPFL Graph Search

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Lateral asymmetric MOSFET, which has longitudinal doping variation in the channel, is the core of high voltage MOSFET. Recently it has been recognized that capacitance property of this kind of device is fundamentally different from conventional MOST becaus ...

This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson’s equation including bandgap widening, intrinsic carrier-density scaling, and incomplete ionization. We demonstrate that accounting for incomplete ionization in the expression of the threshold voltage is critical for an accurate estimation of the current. The model is validated with our experimental results from nMOSFETs of a 28

During the last two decades, ultrafast in-volume laser-based processing of transparent materials has emerged as a key 3D-printing method for manufacturing a variety of complex integrated photonic devices and micro-parts. Yet, identifying suitable laser pro ...

This paper presents the RF characterization and modeling of a 22nm FDSOI technology down to 3.3K for quantum computing applications. The equivalent small-signal components are extracted analytically and automatically from the de-embedded two-port Y -parame ...

The floating-point unit is one of the most common building block in any computing system and is used for a huge number of applications. By combining two state-of-the-art techniques of imprecise hardware, namely Gate-Level Pruning and Inexact Speculative Ad ...

Energy efficiency is of utmost importance in modern applications. Power consumption optimisation could be improved by a comprehensive analytical modeling of the characteristics of critical blocks in a system. Dynamic range (DR) has a strong effect on the p ...

We present InGaAs HEMTs with optimized cryogenic Ohmic contacts, for low-power qubit readout. We utilize tensile strained contact metals to reduce the barrier resistance, which is a major fraction of RSD, leading to ~50% reduction of RSD at low temperature ...

The Frequency Modulated Ultra-Wideband (FM-UWB) is known as a low-power, low-complexity modulation scheme targeting low to moderate data rates in applications such as wireless body area networks. In this paper, a thorough review of all FM-UWB receivers and ...

Sweat biomarker analysis has attracted much interest in applications ranging from sports to wearable healthcare. Among all the sweat biomolecules, abnormal urea levels have been linked to several complications, particularly renal dysfunction. Here, we repo ...

In this paper, the influence of temperature and back-gate bias is experimentally investigated on 22 nm FDSOI CMOS process. Cryogenic DC characterization was carried out under various back-gate voltages, V back , from 2.95 K back to 300 K. An abrupt drop-of ...

A digital circuit including a signal path with a false path, whereby the signal path includes at least 3 logic instances, the digital circuit further including a logic monitoring element for monitoring a part of the digital circuit, and for outputting a cu ...

Although some of the recently proposed compact models for thermal noise in MOS transistors exhibit a good match with experimental data, we believe most of the existing compact models suffer from incorrect physical assumptions or modeling (e.g., absence of ...

This paper introduces a novel method for designing approximate circuits by fabricating and exploiting false timing paths, i.e. critical paths that cannot be logically activated. This allows to strongly relax timing constraints while guaranteeing minimal an ...

A simple approach to the realisation of a differential Colpitts oscillator is to connect the grounded capacitor in the feedback network of two single-ended Colpitts oscillators together in series. As the output signals are expected to be differential, it i ...

This paper presents an experimental investigation, compact modeling, and low-temperature physics-based modeling of a commercial 28-nm bulk CMOS technology operating at cryogenic temperatures. The physical and technological parameters are extracted at 300, ...

Current myoelectrically controlled hand prostheses normally lack tactile feedback, thus limiting their functionalities and user acceptance. We propose a non-invasive tactile sensory feedback system, consisting miniaturized sensors, wireless communication m ...

The work presents the comprehensive design-oriented EKV model for FDSOI technologies, including the backgate effects and geometry dependence. Despite its simplicity, the model correctly captures not only the dependence of the threshold voltage versus the b ...

Nanoscale CMOS devices display very high peak transit frequency Ft of several hundreds of GHz. This feature can be exploited for reducing power consumption by shifting the operating point towards moderate or eventually weak inversion where the Ft still rea ...

In this work, a sub sampling receiver front end at 2.4 GHz with high Q filtering to perform channel selection at RF is presented. A low power solution for channel selection directly at RF is proposed in this work using pseudo-self-biased inverter amplifier with a BAW resonator lattice as a load to realize high selectivity. This work focusses on the Bluetooth LE standard, however the front-end can be used for any protocol standards for radios working at 2.4 GHz. A low power BAW based digitally controlled osc

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...

Christian Enz

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Partitioning Schemes in the Lateral Asymmetric MOST

Cryogenic MOSFET Threshold Voltage Model

Third-harmonic generation monitoring of femtosecond-laser-induced in-volume functional modifications

Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology

Approximate 32-Bit Floating-Point Unit Design with 53% Power-Area Product Reduction

Analytical Modeling of Short-Channel MOSFET Differential Pair Non-Linearity

Cryogenic InGaAs HEMTs with Reduced On-Resistance using Strained Ohmic Contacts

FM-UWB: Towards a Robust, Low-Power Radio for Body Area Networks

Optical Urea Sensing in Sweat for Kidney Healthcare by Sensitive and Selective Non-enhanced Raman Spectroscopy

In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation

System and Method for Optimization of Digital Circuits with Timing and Behavior Co-Designed by Introduction and Exploitation of False Paths

Compact Modeling of Thermal Noise in the MOS Transistor

Design of Approximate Circuits by Fabrication of False Timing Paths: The Carry Cut-Back Adder

Common-mode Oscillation in Capacitive Coupled Differential Colpitts Oscillators

Characterization and Modeling of 28 nm Bulk CMOS Technology down to Cryogenic Temperatures (4.2 K)

Data fusion for a hand prosthesis tactile feedback system

Comprehensive Design-oriented FDSOI EKV Model

Accurate RF modeling of nanoscale MOSFET using BSIM6 including low levels of inversion

A low power 2.4 GHz front end with MEMS lattice based channel filtering at RF

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors