Publication

Cryogenic MOSFET Threshold Voltage Model

Christian Enz
2019
Conference Papers

Résumé

This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson’s equation including bandgap widening, intrinsic carrier-density scaling, and incomplete ionization. We demonstrate that accounting for incomplete ionization in the expression of the threshold voltage is critical for an accurate estimation of the current. The model is validated with our experimental results from nMOSFETs of a 28-nm CMOS process. The developed model is a key element for a cryo-CMOS compact model and can serve as a guide to optimize processes for high-performance cryo-computing and ultra-low-power quantum computing.

Source officielle

https://infoscience.epfl.ch/entities/publication/3791872b-101e-4e70-a2bd-109278f2656e

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Christian Enz
2019
Conference Papers

Résumé

Source officielle

https://infoscience.epfl.ch/entities/publication/3791872b-101e-4e70-a2bd-109278f2656e

À propos de ce résultat

Concepts associés (32)

Conceptual model

A conceptual model is a representation of a system. It consists of concepts used to help people know, understand, or simulate a subject the model represents. In contrast, a physical model focuses on a physical object such as a toy model that may be assembled and made to work like the object it represents. The term may refer to models that are formed after a conceptualization or generalization process. Conceptual models are often abstractions of things in the real world, whether physical or social.

Threshold voltage

The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead.

Electron mobility

In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility. Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field. When an electric field E is applied across a piece of material, the electrons respond by moving with an average velocity called the drift velocity, .

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Publications associées (7)

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Cryogenic MOSFET Threshold Voltage Model

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