Publications de Christian Enz | EPFL Graph Search

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In this paper, we propose a physics-based compact model of the pinned photodiode (PPD) combined with the transfer gate. A set of analytical expressions is derived for the 2-D electrostatic profile, the PPD capacitance, and the charge transfer current. The ...

A Time-of-flight optical device and a 3D optical detector comprising a CMOS integrated circuit with an array of photosensitive pixels that are, at least in part, interconnected to form macro-pixels (180). Each macro-pixel (180) groups a plurality of indivi ...

While sub/near-threshold design offers the minimal power and energy consumption, such approach strongly deteriorates circuit performances and robustness against PVT (process/voltage/temperature) variations, leading to gigantic speed penalties and large sil ...

In all-wireless networks a crucial problem is to minimize energy consumption, as in most cases the nodes are battery-operated. We focus on the problem of power-optimal broadcast, for which it is well known that the broadcast nature of the radio transmission can be exploited to optimize energy consumption. Several authors have conjectured that the problem of power-optimal broadcast is NP-complete. We provide here a formal proof, both for the general case and for the geometric one; in the former case, the net

The DC performance of both n- and pMOSFETs fabricated in a commercial-grade 28 nm bulk CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation annealing. The aim is to assess the potential use of such an advanced CMOS tech ...

This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching between devices. DC ...

We present our recent progress in ultra-low-power intelligent acoustic sensing that harnesses the high power and energy efficiency of cochlea-like analog feature extraction and binarized neural network classification. Compared with conventional methods inc ...

This paper presents an in-depth DC characterization of a 22 nm FDSOI CMOS technology down to deep cryogenic temperature, i.e., 2.95 K. The impact of the back-gate voltage (V-back) on device performance, i.e., threshold voltage (V-T) and carrier transport, ...

This paper compares two in-pixel source follower stage designs for low noise CMOS image sensors embedded both on a same 5 mm by 5 mm chip fabricated in a 180 nm CIS process. The presented chip embeds two pixel variants, one based on a body-effect-canceled ...

This paper presents a CMOS photonic sensor covering multiple applications from ambient light sensing to time resolved photonic sensing. The sensor is made of an array of gated pinned photodiodes (PPDs) averaged using binning and passive switched-capacitor ...

This paper presents a microwave noise source implemented in a commercial CMOS technology. The circuit is based on the avalanche noise generated by both the source-to-bulk and the drain-to-bulk junctions in reverse breakdown. Two sources of different juncti ...

Universal cryogenic computing, encompassing von Neumann, neuromorphic and quantum computing, paves the way for future big-data processing with high energy efficiency. Complementary metal oxide semiconductor (CMOS) technology operating at cryogenic temperatures with ultra-low power consumption is a key component of this advancement. However, classical CMOS technology, designed for room temperature applications, suffers from band-tail effects at cryogenic levels, leading to an increased subthreshold swing and

This paper presents the basis of the modeling of the MOS transistor for circuit simulation at RF. A physical equivalent circuit that can easily be implemented as a Spice subcircuit is first derived. The subcircuit includes a substrate network that accounts for the signal coupling occurring at HF from the drain to the source and the bulk. It is shown that the latter mainly affects the output admittance y22. The bias and geometry dependence of the subcircuit components, leading to a scalable model, are then d

This paper presents an overview of the read noise in CMOS image sensors (CISs) based on four-transistors (4T) pixels, column-level amplification and correlated multiple sampling. Starting from the input-referred noise analytical formula, process level opti ...

Accurate modeling and efficient parameter extraction of a small signal equivalent circuit of MOS transistors for high-frequency operation are presented. The small-signal equivalent circuit is based on the quasi-static approximation which was found to be adequate up to 10 GHz for MOS transistors fabricated by a 20 GHz cutoff frequency technology. The extrinsic components and substrate coupling effects are properly included. Direct extraction is performed by Y-parameter analysis on the equivalent circuit in t

An in-depth analysis of modern technologies could represent the base for the success of the High Luminosity Large Hadron Collider experiments. The requirement is a new reliable electronics in 1Grad-TID environments. For the purpose, single devices in TSMC ...

The paper presents a low-power transmitter (TX) as a part of a fully integrated 57-66 GHz FMCW radar system. The TX path includes a BPSK modulator and it is optimized for short-range operation with 0 dBm output power. A band-tuning technique is used for co ...

The Large Hadron Collider (LHC) running at CERN will soon be upgraded to increase its luminosity giving rise to radiations reaching the level of GigaRad Total Ionizing Dose (TID). This paper investigates the impact of such high radiation on transistors fab ...

Christian Enz

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Compact Modeling of Charge Transfer in Pinned Photodiodes for CMOS Image Sensors

Time-of-flight device and 3d optical detector

Near/Sub-Threshold Circuits and Approximate Computing: The Perfect Combination for Ultra-Low-Power Systems

Minimum-energy broadcast in all-wireless networks: NP-Completeness and distribution issues

Minimum-Energy Broadcast in All-Wireless Networks: NP-Completeness and Distribution Issues

Minimum-energy broadcast in all-wireless networks: NP-completeness and distribution issues

GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

Ultra-Low-Power Intelligent Acoustic Sensing using Cochlea-Inspired Feature Extraction and DNN Classification

Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures

Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors

An Ultra-Low Power PPG and mm-Resolution ToF PPD-Based CMOS Chip Towards All-in-One Photonic Sensors

Avalanche Microwave Noise Sources in Commercial 90-nm CMOS Technology

Ultra-low-power Cryogenic Complementary Metal Oxide Semiconductor Technology

MOS Transistor Modeling for RF IC Design

Noise Reduction Techniques and Scaling Effects towards Photon Counting CMOS Image Sensors

A High-Frequency MOS Transistor Model and its Effects on Radio-Frequency Circuits

1GigaRad TID impact on 28 nm HEP analog circuits

An Optimized Low-Power Band-Tuning TX for Short-Range FMCW Radar in 22-nm FDSOI CMOS

Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC