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Christian Enz

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Related publications (213)

Page 2 of 11

Near/Sub-Threshold Circuits and Approximate Computing: The Perfect Combination for Ultra-Low-Power Systems

Christian Enz, Vincent Frédéric Camus, Jérémy Lucien Maurice Schlachter

While sub/near-threshold design offers the minimal power and energy consumption, such approach strongly deteriorates circuit performances and robustness against PVT (process/voltage/temperature) variations, leading to gigantic speed penalties and large sil ...

IEEE2015

Time-of-flight device and 3d optical detector

Christian Enz, Assim Boukhayma, Antonino Caizzone

A Time-of-flight optical device and a 3D optical detector comprising a CMOS integrated circuit with an array of photosensitive pixels that are, at least in part, interconnected to form macro-pixels (180). Each macro-pixel (180) groups a plurality of indivi ...

2020

GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs

Christian Enz, Claudio Bruschini, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

The DC performance of both n- and pMOSFETs fabricated in a commercial-grade 28 nm bulk CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation annealing. The aim is to assess the potential use of such an advanced CMOS tech ...

IEEE2016

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

Christian Enz

This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching between devices. DC ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors

Christian Enz, Assim Boukhayma, Antonino Caizzone, Minhao Yang, Daniel Mathias Bold, Andrea Kraxner

This paper compares two in-pixel source follower stage designs for low noise CMOS image sensors embedded both on a same 5 mm by 5 mm chip fabricated in a 180 nm CIS process. The presented chip embeds two pixel variants, one based on a body-effect-canceled ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Ultra-Low-Power Intelligent Acoustic Sensing using Cochlea-Inspired Feature Extraction and DNN Classification

Christian Enz, Minhao Yang

We present our recent progress in ultra-low-power intelligent acoustic sensing that harnesses the high power and energy efficiency of cochlea-like analog feature extraction and binarized neural network classification. Compared with conventional methods inc ...

IEEE2019

Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures

Edoardo Charbon, Christian Enz, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico

This paper presents an in-depth DC characterization of a 22 nm FDSOI CMOS technology down to deep cryogenic temperature, i.e., 2.95 K. The impact of the back-gate voltage (V-back) on device performance, i.e., threshold voltage (V-T) and carrier transport, ...

PERGAMON-ELSEVIER SCIENCE LTD2022

An Ultra-Low Power PPG and mm-Resolution ToF PPD-Based CMOS Chip Towards All-in-One Photonic Sensors

Christian Enz, Assim Boukhayma, Antonino Caizzone

This paper presents a CMOS photonic sensor covering multiple applications from ambient light sensing to time resolved photonic sensing. The sensor is made of an array of gated pinned photodiodes (PPDs) averaged using binning and passive switched-capacitor ...

2019

Avalanche Microwave Noise Sources in Commercial 90-nm CMOS Technology

Christian Enz, Pierre-André Farine, Cyril Botteron, Gabriele Tasselli

This paper presents a microwave noise source implemented in a commercial CMOS technology. The circuit is based on the avalanche noise generated by both the source-to-bulk and the drain-to-bulk junctions in reverse breakdown. Two sources of different juncti ...

Institute of Electrical and Electronics Engineers2016

Noise Reduction Techniques and Scaling Effects towards Photon Counting CMOS Image Sensors

Christian Enz, Assim Boukhayma

This paper presents an overview of the read noise in CMOS image sensors (CISs) based on four-transistors (4T) pixels, column-level amplification and correlated multiple sampling. Starting from the input-referred noise analytical formula, process level opti ...

Mdpi Ag2016

1GigaRad TID impact on 28 nm HEP analog circuits

Christian Enz

An in-depth analysis of modern technologies could represent the base for the success of the High Luminosity Large Hadron Collider experiments. The requirement is a new reliable electronics in 1Grad-TID environments. For the purpose, single devices in TSMC ...

ELSEVIER SCIENCE BV2018

An Optimized Low-Power Band-Tuning TX for Short-Range FMCW Radar in 22-nm FDSOI CMOS

Christian Enz, Francesco Chicco, Sammy Cerida Rengifo

The paper presents a low-power transmitter (TX) as a part of a fully integrated 57-66 GHz FMCW radar system. The TX path includes a BPSK modulator and it is optimized for short-range operation with 0 dBm output power. A band-tuning technique is used for co ...

IEEE2021

Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC

Christian Enz, Claudio Bruschini, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

The Large Hadron Collider (LHC) running at CERN will soon be upgraded to increase its luminosity giving rise to radiations reaching the level of GigaRad Total Ionizing Dose (TID). This paper investigates the impact of such high radiation on transistors fab ...

IEEE2016

Sub-electron CIS noise analysis in 65 nm process

Christian Enz, Assim Boukhayma, Raffaele Capoccia

For a 4T pixel-based CMOS image sensors (CIS) readout chain, with column-level amplification and CDS, we show that the input-referred total noise in a standard 65 nm process can be reduced to 0.37 e-rms. Based on transient noise simulation using Eldo, the ...

2016

A 51.4 Mb/s FSK Transmitter Employing a Phase Domain Digital Synthesizer with 1.5 mu s Start-up for Energy Efficient Duty Cycling

Christian Enz, Nicola Scolari, David Ruffieux, Raghavasimhan Thirunarayanan

This paper presents a low start-up latency Transmitter (TX) that can achieve FSK data rates of upto 51.4 Mb/s for deployment in duty cycled microsensor nodes. Utilizing a Phase Domain Digital Synthesizer with an FBAR frequency reference, this TX has a star ...

Ieee2016

Building Blocks for an Ultra Low-Power MEMS-based Radio

Christian Enz

The recent advances made in MEMS and particularly in RF MEMS technology are enabling new architectures for the integration of RF transceivers with improved performance and smaller size. Several fundamental building blocks benefit from the availability of h ...

2007

A Low-power Carry Cut-Back Approximate Adder with Fixed-point Implementation and Floating-point Precision

Christian Enz, Vincent Frédéric Camus, Jérémy Lucien Maurice Schlachter

This paper introduces an approximate adder architecture based on a digital quasi-feedback technique called Carry Cut-Back in which high-significance stages can cut the carry propagation chain at lower-significance positions. This lightweight approach preve ...

Ieee2016

Cryogenic InGaAs HEMT-Based Switches For Quantum Signal Routing

Christian Enz, Hung-Chi Han

We demonstrate cryogenic switching devices based on HEMT technology for scalable quantum computer (QC) control and readout signal routing. The switches are implemented in a quantum well network design without metal contacts between gates, and exhibit extre ...

IEEE2022

A 100 kb/s, 4 GHz, 267 mu W Fully Integrated Low Power FM-UWB Transceiver with Multiple Channels

Christian Enz, Vladimir Kopta

A 4 GHz, 100 kb/s FM-UWB transceiver for short-range communications in a body area network is presented. Two receivers and a transmitter use the same RF port with a fully-integrated matching network. The first receiver provides multi-user communication cap ...

IEEE2018

Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing

Christian Enz, Arnout Lodewijk M Beckers, Farzan Jazaeri

In this paper a commercial 28 nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and interface traps on this technology starting from the fundamental device-phys ...

2018