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Concept

Diode modelling

Publications associées (25)

Generalized Charge Based Model of Double Gate Junctionless FETs Including Inversion

Jean-Michel Sallese, Farzan Jazaeri, Lucian Barbut

In this brief, we have developed a charge-based model for the symmetric double gate junctionless FET that also accounts for the inversion layer when the gate voltage is biased in deep depletion. Basically, this approach represents a generalization of a for ...

Institute of Electrical and Electronics Engineers2014

Ultra-Low-Temperature Silicon and Germanium-on-Silicon Avalanche Photodiodes : Modeling, Design, and Characterization

Mahdi Aminian

In this thesis we propose the use of photodiodes fabricated in planar technologies to address the detection problem in these applications. A number of solutions exist, optimized for these wavelengths, based on Germanium (Ge) and other III-V materials. In t ...

EPFL2014

An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

Mihai Adrian Ionescu, Luca De Michielis, Arnab Biswas, Livio Lattanzio, Nilay Dagtekin, Heike Riel

In this paper, an analytical band-to-band tunneling model is proposed, validated by means of drift-diffusion simulation and comparison with experimental data, implemented in Verilog-A, and finally proven with SPICE simulator through simulation of circuits ...

American Institute of Physics2013

Beyond Scaling : Physics and Modeling for Pushing the Frontiers of Low-Power Devices

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

Nicolas Grandjean, Jean-François Carlin

The Ni/Al2O3/InAlN/AlN/GaN metal-oxide-semiconductor heterostructure (MOS-H) is investigated using capacitance-voltage and capacitance-time characteristics in the temperature range of 25-300 degrees C. An anomalous positive voltage shift of the capacitance ...

2009