Publications related to Oxygen effects on hopping transport in polycrystalline tungsten disulfide transistors via laser-assisted doping

Related publications (9)

Cryogenic Characterization and Modeling of Advanced MOSFET Technologies for Large-scale Quantum Computing

With the rapid advancement of quantum computing, there is a growing demand for reliable quantum devices operating at cryogenic temperatures to achieve fault-tolerant systems. Cryo-CMOS has recently gained much attention as the key solution to manipulating ...

EPFL2024

Enhancement of electrocatalysis through magnetic field effects on mass transport

Jean-Philippe Ansermet, Magalí Alejandra Lingenfelder, Yunchang Liang

Magnetic field effects on electrocatalysis have recently gained attention due to the substantial enhancement of the oxygen evolution reaction (OER) on ferromagnetic catalysts. When detecting an enhanced catalytic activity, the effect of magnetic fields on ...

Nature Portfolio2024

Accurate Prediction of Hall Mobilities in Two-Dimensional Materials through Gauge-Covariant Quadrupolar Contributions

Nicola Marzari

Despite considerable efforts, accurate computations of electron-phonon and carrier transport properties of low-dimensional materials from first principles have remained elusive. By building on recent advances in the description of long-range electrostatics ...

Amer Physical Soc2023

“Forbidden” Polarisation and Extraordinary Piezoelectric Effect in Organometallic Lead Halide Perovskites

László Forró, Dragan Damjanovic, Endre Horvath, Márton Kollár, Lukas Riemer, Milica Vasiljevic

Organometallic lead halide perovskites are highly efficient materials for solar cells and other optoelectronic applications due to their high quantum efficiency and exceptional semiconducting properties. A peculiarity of these perovskites is the substantia ...

2022

Slow Charge Carrier Relaxation in Gold Nanoparticles

Davood Zare, Majed Chergui, Malte Oppermann, Thomas Charles Henry Rossi, Lars-Hendrik Mewes, Benjamin Bauer, Lijie Wang

We report on ultrafast transient absorption (TA) studies of surface plasmon-excited similar to 25 nm-diameter Au nanoparticles in solution, monitoring the response of the surface plasmon resonance in the visible region (1.7-3.0 eV) and that of the inter- a ...

AMER CHEMICAL SOC2020

Bulk diffusive relaxation mechanisms in optically excited topological insulators

Helmuth Berger, Arnaud Magrez, Philippe Bugnon, Alberto Crepaldi

The possibility to inject spin currents in topological insulators (TIs) by ultrashort optical pulses has stimulated intense studies of their out-of-equilibrium electronic properties. However, a comprehensive description of the electronic relaxation dynamic ...

Amer Physical Soc2017

Dangling bond charge transition levels in AlAs, GaAs, and InAs

Alfredo Pasquarello, Hannu-Pekka Komsa

Charge transition levels of dangling bonds in III-V semiconductors (AlAs, GaAs, and InAs) are determined via hybrid density-functional calculations. In GaAs, the Ga and As levels are found at 0.28 eV below the conduction band and at 0.16 eV above the valen ...

2010

The Equivalent-Thickness Concept for Doped Symmetric DG MOSFETs

Jean-Michel Sallese

In this paper, we propose to derive an analytical model for the doped symmetric double-gate (DG) MOSFET that is valid in all regions of operation. We show that doping the silicon channel can be converted in an equivalent silicon thickness and threshold vol ...

2010

Electrochemical and morphological characterization of gold nanoparticles deposited on boron doped diamond electrode

Christos Comninellis, György Foti, Bahaa El Roustom

2009