Publication

The Equivalent-Thickness Concept for Doped Symmetric DG MOSFETs

Jean-Michel Sallese, Christophe Lallement
2010
Journal Articles

Abstract

In this paper, we propose to derive an analytical model for the doped symmetric double-gate (DG) MOSFET that is valid in all regions of operation. We show that doping the silicon channel can be converted in an equivalent silicon thickness and threshold voltage shift using a formalism developed for the undoped device. Adopting the same physical parameters, we demonstrate that this approach is in agreement with numerical technology computer-aided design simulations. This concept is therefore an interesting basis for a unified model for doped and undoped symmetric DG MOSFETs.

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https://infoscience.epfl.ch/entities/publication/b0d798c8-1b44-48b3-8442-fc4fbf3fbb20

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Jean-Michel Sallese, Christophe Lallement
2010
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/b0d798c8-1b44-48b3-8442-fc4fbf3fbb20

About this result

Related concepts (15)

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

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The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

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