High power vertical external cavity surface-emitting lasers (VECSELs) emitting in 1310 nm and 1550 nm bands

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Halide perovskites are fascinating semiconductors for light-emitting applications. Compared to conventional inorganic covalent semiconductors like silicon or GaAs, perovskites are structurally soft and often more disordered. Understanding the consequences of this remains a key challenge for commercialization but offers also opportunities for tailoring properties to target applications. Here I will present our recent mechanistic insights from spectroscopy on the role of composition, doping and dimensionalit

Site-controlled InGaAsN quantum wires (QWRs) emitting at 1.3 lm at room temperature were grown on V-grooved GaAs substrates by modulated-flux metallorganic vapor phase epitaxy. The nonplanar substrate template is shown to enhance the nitrogen uptake, evidenced by a redshift in photoluminescence wavelength twice larger for the QWRs than for the adjacent quantum well regions. The mechanism of this increase in nitrogen incorporation efficiency, achieved without degradation in optical properties, is explained b

A new generation of 10 Gb/s wafer fused VCSELS show high single mode output in excess of 2mW at 80 degrees C (6mW at 20 degrees C) in the 1310 nm band and 1.5mW at 80 degrees C (4 mW at 20 degrees C) in the 1550 nm band. Error free transmission over 10 km of standard single mode fiber was performed with less than 1 dB penalty.

Polarization stable, wafer-fused 1310 nm VCSELs employing sub-wavelength shallow gratings on their top DBR and emitting 1.5 mW single mode output power in the 20 degrees C - 75 degrees C temperature range are demonstrated. (C) 2008 Optical Society of America

The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 mum were investigated by temperature-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL efficiency at low excitation, but saturate faster as the excitation is increased, due to the lower density of states. Lifetime measurements show that nonradiative recombination plays a more important role in the GaInNAs QW than in QDs. (C) 2002 American Institu

Microcavity light-emitting diodes (MCLEDs) with top-emitting geometry have been grown by molecular beam epitaxy on GaAs and Si substrates. External quantum efficiencies of up to 10% were obtained for 420 x 420 mu m(2) homoepitaxial devices. The efficiency of 32 x 32 mu m(2) diodes was 4% for homoepitaxial devices and 1% for diodes realized on conformal GaAs-on-Si stripes. Much lower efficiencies were obtained for devices grown directly on GaAs-on-Si seed layers, demonstrating that the conformal epitaxy tech

Fiber gratings irradiated by CW-laser show a breaking strength and a lifetime performance similar to that of pristine fiber, on pulsed KrF-laser irradiation. In this paper we report on the mechanical reliability of fibers irradiated by UV light using the side exposure technique. Homogeneous excimer laser irradiation reduces the mechanical resistance considerably depending on the fluence per pulse and the laser wavelength. With increasing pulse energy density the mechanical resistance is lowered. In contrary

We examine the room-temperature dispersive and non-dispersive cathodoluminescent (CL) signals produced by an n-InP/n(+)-InP homojunction as a function of excitation beam energy. The non-intentionally doped epilayer of the homojunction is thick enough (2.5 mu m) that it can be investigated independently of the substrate by choosing beam energies lower than 25 keV. The red-shift of CL peak, as well as the drastic change of the shape of the CL spectra, observed when increasing the beam energy, are explained in

A review of experimental results obtained by different techniques is presented on the problem of zinc diffusion. Zinc diffusion was carried out on Si-doped GaAs (n almost-equal-to 10(18) cm-3) and on multiple quantum well (MQW) structures. The samples were investigated by secondary-ion mass spectroscopy (SIMS), different imaging modes of scanning electron microscopy such as secondary electrons, cathodoluminescence (CL) and electron beam-induced current (EBIC), transmission electron microscopy on a wedge-sha

High power vertical external cavity surface-emitting lasers (VECSELs) emitting in 1310 nm and 1550 nm bands

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Light Emission & Localization Mechanisms in Halide Perovskites – Composition, Doping, Dimensionality

Dilute nitride InGaAsN/GaAs V-groove quantum wires emitting at 1.3 μm wavelength at room temperature

10 gbps VCSELs with high single mode output in 1310nm and 1550 nm wavelength bands

Polarization Control of Wafer-Fused Long-Wavelength VCSELs using Sub-Wavelength Shallow Gratings

Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 mu m

High-efficiency top-emitting microcavity LEDs on GaAs and GaAs Si substrates

Mechanical reliability of UV irradiated fibers: application to Bragg grating fabrication - invited

Photon recycling as the dominant process of luminescence generation in an electron beam excited n-InP epilayer grown on an n(+)-InP substrate

Zinc Diffusion in Gaas and Zinc-Induced Disordering of Gaas Algaas Multiple Quantum-Wells - a Multitechnique Study