Publication

Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 mu m

Benoît Marie Joseph Deveaud, Ursula Oesterle, Marc Ilegems, Jean-Daniel Ganière, Andrea Fiore
2002
Journal Articles

Abstract

The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 mum were investigated by temperature-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL efficiency at low excitation, but saturate faster as the excitation is increased, due to the lower density of states. Lifetime measurements show that nonradiative recombination plays a more important role in the GaInNAs QW than in QDs. (C) 2002 American Institute of Physics.

Official source

https://infoscience.epfl.ch/entities/publication/f1b34fdc-6f33-4902-8045-0e5c281efb55

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Benoît Marie Joseph Deveaud, Ursula Oesterle, Marc Ilegems, Jean-Daniel Ganière, Andrea Fiore
2002
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/f1b34fdc-6f33-4902-8045-0e5c281efb55

About this result

Related concepts (24)

Light-emitting diode

A light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corresponding to the energy of the photons) is determined by the energy required for electrons to cross the band gap of the semiconductor. White light is obtained by using multiple semiconductors or a layer of light-emitting phosphor on the semiconductor device.

OLED

An organic light-emitting diode (OLED), also known as organic electroluminescent (organic EL) diode, is a light-emitting diode (LED) in which the emissive electroluminescent layer is a film of organic compound that emits light in response to an electric current. This organic layer is situated between two electrodes; typically, at least one of these electrodes is transparent. OLEDs are used to create digital displays in devices such as television screens, computer monitors, and portable systems such as smartphones and handheld game consoles.

Carrier generation and recombination

In the solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices, such as photodiodes, light-emitting diodes and laser diodes. They are also critical to a full analysis of p-n junction devices such as bipolar junction transistors and p-n junction diodes.

Related publications (6)

Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 mu m

Chat with Graph Search

Cathodoluminescence Analysis of Defects and Grain Boundaries in Zn3P2 Thin Films Grown on Graphene by MOVPE and MBE

Light Emission & Localization Mechanisms in Halide Perovskites – Composition, Doping, Dimensionality

Charged exciton dynamics in GaAs quantum wells

Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 mu m

Chat with Graph Search

Cathodoluminescence Analysis of Defects and Grain Boundaries in Zn3P2 Thin Films Grown on Graphene by MOVPE and MBE

Light Emission &amp; Localization Mechanisms in Halide Perovskites – Composition, Doping, Dimensionality

Charged exciton dynamics in GaAs quantum wells

Light Emission & Localization Mechanisms in Halide Perovskites – Composition, Doping, Dimensionality