Publications related to Double multiplication region configuration for near-infrared sensitivity enhancement in silicon cmos single-photon avalanche diodes

Related publications (12)

Origin of giant enhancement of phase contrast in electron holography of modulation-doped n-type GaN

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté

The electron optical phase contrast probed by electron holography at n-n+ GaN doping steps is found to exhibit a giant enhancement, in sharp contrast to the always smaller than expected phase contrast reported for p-n junctions. We unravel the physical ori ...

2024

Transparent Porous Conductive Substrates for Gas-Phase Photoelectrochemical Hydrogen Production

Kevin Sivula, Jun Ho Yum, Simon Nussbaum, Rebekah Anne Wells, Marina Caroline Michèle Caretti, Hannah Elizabeth Johnson, Emeline Cécile Rideau, Benjamin Goldman, Elizaveta Potapova Mensi

Gas diffusion electrodes are essential components of common fuel and electrolysis cells but are typically made from graphitic carbon or metallic materials, which do not allow light transmittance and thus limit the development of gas-phase based photoelectr ...

Wiley-V C H Verlag Gmbh2023

A Fully Printable Hole-Transporter-Free Semi-Transparent Perovskite Solar Cell

Michael Graetzel, Shaik Mohammed Zakeeruddin, Mohammad Ibrahim Dar, Norman Pellet

Perovskite solar cells (PSCs) have gained tremendous attention owing to their promising photovoltaic performance, surpassing all the alternative technologies based on solution-processed materials. PSCs displaying record efficiencies contain hole transporti ...

WILEY-V C H VERLAG GMBH2021

Long‐Lived Photocharges in Supramoelcular Polymers of Low‐Bandgap Chromophores

Andrzej Sienkiewicz, Holger Frauenrath, Daniel Görl, Regina Judith Hafner

Photoinduced charge separation in supramolecular aggregates of π‐conjugated molecules is a fundamental photophysical process, and a key criterion for the development of advanced organic electronics materials. Here, we report on the self‐assembly of novel l ...

2020

Subthermionic negative capacitance ion sensitive field-effect transistor

Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando, Carlotta Gastaldi

One of the main advantages of Ion-Sensitive Field-Effect Transistor (ISFET) technology is the capability to exploit technological advancements initially developed for conventional FETs for logic applications, such as the employ of high-k dielectrics for th ...

2020

Separating the impact of oxygen and water on the long-term stability of n-channel perylene diimide thin-film transistors

Klaus Kern

A detailed understanding for the mechanisms that control degradation of the electrical performance of organic thin-film transistors (TFTs) during exposure to various environments, such as oxygen and humidity, is still developing. This is particularly true ...

Elsevier Science Bv2015

Explicit drain current model of junctionless double-gate field-effect transistors

Jean-Michel Sallese, Ashkhen Yesayan

This paper presents an explicit drain current model for the junctionless double-gate metal-oxide-semiconductor field-effect transistor. Analytical relationships for the channel charge densities and for the drain current are derived as explicit functions of ...

Pergamon-Elsevier Science Ltd2013

3D near-infrared imaging based on a single-photon avalanche diode array sensor

Edoardo Charbon, Juan Mata Pavia

Near-infrared light can be used to determine the optical properties (absorption and scattering) of human tissue. Optical tomography uses this principle to image the internal structure of parts of the body by measuring the light that is scattered in the tis ...

2012

Correlating long-lived photogenerated hole populations with photocurrent densities in hematite water oxidation photoanodes

Michael Graetzel, Kevin Sivula

Photogenerated charge carrier dynamics are investigated as a function of applied bias in a variety of different hematite photoanodes for solar water oxidation. Transient absorption spectroscopy is used to probe the photogenerated holes, while transient pho ...

2012

A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET

Jean-Michel Sallese, François Krummenacher, Antonios Bazigos, Matthias Bucher

This paper presents a novel physics-based analytical compact model for the drift region of a high-voltage metal-oxide-semiconductor field-effect transistor (HV-MOSFET). According to this model, the drift region is considered as a simple 1-D problem, just a ...

2011

The Equivalent Electron Density Concept for Static and Dynamic Modeling of the IGBT Base in Soft- and Hard-Switching Applications

Alfred Rufer, Serge Pittet

The transient and static behavior of an insulated gate bipolar transistor (IGBT) are analyzed through finite elements simulations and physically based equations. The standard model using a bipolar transistor driven by a MOSFET is abandoned for three partia ...

2007

Crossover from capacitive to pseudoinductive charge-relaxation in organic/polymeric light-emitting diodes

Frank Nüesch, Libero Zuppiroli

In this work we propose a phenomenological microscopic approach to deal with pseudoinductive charge-relaxation processes (named also as negative capacitance phenomena) in organic molecules (tris-8-hydroxyquinoline-aluminum) and polymeric [poly(2-metoxy-5-( ...

AIP2005