Publication

Laterally vibrating-body double gate MOSFET with improved signal detection

Mihai Adrian Ionescu, Marco Mazza, Nicoleta-Diana Ciressan
2008
Conference Papers

Abstract

Laterally vibrating-body double-gate MOSFET that shows a +30 dB signal increase compared to an identical resonator operating with pure capacitive detection is reported. The double-gate MOSFET is fabricated on SOI substrate with silicon film thickness of 1.25 mum and laterally vibrating MOS transistor structure has two lateral fixed gates separated from the movable transistor body by gaps of 165 nm.

Official source

https://infoscience.epfl.ch/entities/publication/e43afbfa-05d7-432c-95aa-11464c991bef

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Laterally vibrating-body double gate MOSFET with improved signal detection

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