Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

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GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...

Glass has been the material of choice for making optical elements, in large part due to its intrinsic properties: a temperature-dependent viscosity, which enables shaping the material into a broad variety of functional and artistic glassware. Silica glass ...

Photonic integrated circuits are paving the way for novel on-chip functionalities with diverse applications in communication, computing, and beyond. The integration of on-chip light sources, especially single-mode lasers, is crucial for advancing those pho ...

Over the past decade, quantum photonics platforms aiming at harnessing the fundamental properties of single particles, such as quantum superposition and quantum entanglement, have flourished. In this context, single-photon emitters capable of operating at ...

Photonics integrated circuits are a promising solution for the growing demands of data transmission and future system-on-chip technologies. Within this context, nonlinear optical interactions offer unique opportunities for all-optical processing, sampling, ...

Chip-based, single-frequency and low phase-noise integrated photonic laser diodes emitting in the violet (412 nm) and blue (461 nm) regime are demonstrated. The GaN-based edge-emitting laser diodes were coupled to high-quality on-chip micro-resonators for ...

Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical linewidths. Exter ...

Early works(1) and recent advances in thin-film lithium niobate (LiNbO3) on insulator have enabled low-loss photonic integrated circuits(2,3), modulators with improved half-wave voltage(4,5), electro-optic frequency combs(6) and on-chip electro-optic devic ...

The invention relates to a Method for operating a frequency agile tunable self-injection locking laser system being formed by a laser device coupled to at least one optical resonator, wherein a diode current of a laser diode of the laser device is controll ...

Bubbles generated with lasers in liquids under confinement have been investigated for their potential use as the driving mechanism for liquid micro-jets in various microfluidic devices, such as needle-free jet injectors. Here, we report on the study of bub ...

Photonic integrated circuits (PICs) are the subject of massive interest due to the range of applications they can provide at a huge scale while building on well-established CMOS technologies. One of the critical parameters defining a technology's maturity ...

Microcavity polaritons are strongly interacting hybrid light-matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonator ...

Materials properties are strictly dependent on their microstructure. The internal symmetries and the disposition of the constituting atoms of a material, which depend on its crystallographic structure, greatly affect its response to mechanical, electromagn ...

Free-space optics allows for design freedom and control, but miniaturization and manufacturability are limited. Here, we present a method for manufacturing complex miniaturized free-space optical systems that combines contactless femtosecond laser-activate ...

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

Ring resonators have proven to be extremely successful for generation of temporal dissipative Kerr solitons, but their dispersion engineering is limited. We present a photonic-crystal Fabry-Perot resonator with record-high quality factors in gallium phosph ...

Self-powered skin optoelectronics fabricated on ultrathin polymer films is emerging as one of the most promising components for the next-generation Internet of Things (IoT) technology. However, a longstanding challenge is the device underperformance owing ...

Integrated optics has shown itself very convenient for exploiting nonlinear processes as it results in high confinement factor, freedom of dispersion engineering and compactness. However, the choice of materials is crucial for the development of nonlinear ...

Cavities concentrate light and enhance its interaction with matter. Confining to microscopic volumes is necessary for many applications but space constraints in such cavities limit the design freedom. Here we demonstrate stable optical microcavities by cou ...

Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

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Method for operating a frequency agile tunable self-injection locking laser system and self-injection locking laser system

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Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

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Metasurface-stabilized optical microcavities