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Publication

Soliton Generation in a Gallium Phosphide Photonic-Crystal Fabry-Perot Microresonator

Tobias Kippenberg, Johann Emmeram Riemensberger, Miles Henry Anderson, Nikolai Kuznetsov, Alisa Davydova, Alberto Nardi
2023
Conference Papers

Abstract

Ring resonators have proven to be extremely successful for generation of temporal dissipative Kerr solitons, but their dispersion engineering is limited. We present a photonic-crystal Fabry-Perot resonator with record-high quality factors in gallium phosphide, a material with exceptional optical properties, for bright soliton generation.

Official source

https://infoscience.epfl.ch/entities/publication/4b7a4c96-9ab8-4a0e-b66e-b72edec783d9

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Tobias Kippenberg, Johann Emmeram Riemensberger, Miles Henry Anderson, Nikolai Kuznetsov, Alisa Davydova, Alberto Nardi
2023
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/4b7a4c96-9ab8-4a0e-b66e-b72edec783d9

About this result

Related concepts (12)

Indium phosphide

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors. Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide at 400 °C., also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphine.

Mode locking

Mode locking is a technique in optics by which a laser can be made to produce pulses of light of extremely short duration, on the order of picoseconds (10−12 s) or femtoseconds (10−15 s). A laser operated in this way is sometimes referred to as a femtosecond laser, for example, in modern refractive surgery. The basis of the technique is to induce a fixed phase relationship between the longitudinal modes of the laser's resonant cavity. Constructive interference between these modes can cause the laser light to be produced as a train of pulses.

Gallium arsenide

Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.

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