Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

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Thermal motion of a room-temperature mechanical resonator typically dominates the quantum backaction of its position measurement. This is a longstanding barrier for exploring cavity optomechanics at room temperature. In order to enter the quantum regime of ...

An important building block for on-chip photonic applications is a scaled emitter. Whispering gallery mode cavities based on III-Vs on Si allow for small device footprints and lasing with low thresholds. However, multimodal emission and wavelength stabilit ...

Laser polishing (LP) is a process that allows a significant reduction of the surface roughness of a metal workpiece via re-melting a shallow layer of material. However, the practical use of LP is limited due to the difficulty of satisfying the high surface ...

Devices based on two-dimensional (2D) semiconductors hold promise for the realization of compact and versatile on-chip interconnects between electrical and optical signals. Although light emitting diodes (LEDs) are fundamental building blocks for integrate ...

III-V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si techno ...

The ability to amplify optical signals is of pivotal importance across science and technology typically using rare-earth-doped fibres or gain media based on III-V semiconductors. A different physical process to amplify optical signals is to use the Kerr no ...

Deep defects have a fundamental role in determining the electro-optical characteristics and in the efficiency of InGaN light-emitting diodes (LEDs). However, modeling their effect on the electrical characteristics of the LED is not straightforward. ...

Photonic integrated systems can be harnessed for fast and efficient optical telecommunication and metrology technologies. Here the authors develop a dual-soliton microcomb technique for massively parallel coherent laser ranging that requires only a single ...

Experimental data for the generation of optical frequency combs in magnesium fluoride microcavities with whispering gallery modes at 780 nm are presented. This wavelength corresponds to the normal group velocity dispersion for pumping by a laser diode oper ...

Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

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Ultra low quantum decoherence nano-optomechanical systems

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Generation of Optical Frequency Combs in an Optical Microresonator Pumped by a 780-nm Laser Diode in Self-Injection Locking Regime