Publication

Strain and surface morphology in lattice-matched ZnSe/InxGa1-xAs heterostructures

Jean-Daniel Ganière
1998
Journal Articles

Abstract

Lattice-matched ZnSe/InxGa1-xAs heterostructures were fabricated by molecular beam epitaxy on GaAs(001)2x4 surfaces. We find that the partial character of the strain relaxation within the ternary layer can be compensated by a suitable excess in the In concentration to match the free-surface lattice parameter to ZnSe. The surface of the II-VI epilayer, however, exhibits a cross-hatched pattern of surface corrugations oriented along orthogonal [110] directions. This complex surface morphology reflects the formation of surface slip steps during the nucleation of dislocation half-loops at the surface and the establishment of the misfit dislocation network at the InxGa1-xAs/GaAs interface. (C) 1998 American Institute of Physics.

Official source

https://infoscience.epfl.ch/entities/publication/c1198d9b-e915-4154-91ee-3ad7f848d350

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Jean-Daniel Ganière
1998
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/c1198d9b-e915-4154-91ee-3ad7f848d350

About this result

Related concepts (21)

Dislocation

In materials science, a dislocation or Taylor's dislocation is a linear crystallographic defect or irregularity within a crystal structure that contains an abrupt change in the arrangement of atoms. The movement of dislocations allow atoms to slide over each other at low stress levels and is known as glide or slip. The crystalline order is restored on either side of a glide dislocation but the atoms on one side have moved by one position. The crystalline order is not fully restored with a partial dislocation.

Heterojunction

A heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers, solar cells and transistors. The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably.

Slip (materials science)

In materials science, slip is the large displacement of one part of a crystal relative to another part along crystallographic planes and directions. Slip occurs by the passage of dislocations on close/packed planes, which are planes containing the greatest number of atoms per area and in close-packed directions (most atoms per length). Close-packed planes are known as slip or glide planes. A slip system describes the set of symmetrically identical slip planes and associated family of slip directions for which dislocation motion can easily occur and lead to plastic deformation.

Related publications (4)

Strain and surface morphology in lattice-matched ZnSe/InxGa1-xAs heterostructures

Chat with Graph Search

Structure Sensitivity of Alkynol Hydrogenation on Shape- and Size-Controlled Palladium Nanocrystals: Which Sites Are Most Active and Selective?

InGaN/GaN resonant-cavity LED including an AlInN/GaN bragg mirror

Thermal Stability of InP-Based Structures for Wafer Fused Laser Diodes