Publication

Effect of growth interruptions on ultra thin InAs/InP quantum grown by chemical beam epitaxy

Romuald Houdré, Jean-François Carlin, Alok Rudra, Marc Ilegems
1992
Journal Articles

Abstract

We have studied the effect of growth interruptions on 2 monolayer thick InAs/InP strained quantum wells (QWS) grown by chemical beam epitaxy. The main feature is the formation of up to 8 monolayer thick InAs islands during As, annealing of the QW. Their formation is characterized by a two- to three-dimensional transition of the reflection high energy electron diffraction (RHEED) pattern and by multiple-line photoluminescence spectra. This interpretation of the data is confirmed by transmission electron microscopy (TEM).

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https://infoscience.epfl.ch/entities/publication/c0308acc-a82e-4668-a074-8421abcb1058

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Romuald Houdré, Jean-François Carlin, Alok Rudra, Marc Ilegems
1992
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/c0308acc-a82e-4668-a074-8421abcb1058

About this result

Related concepts (19)

Electron microscope

An electron microscope is a microscope that uses a beam of electrons as a source of illumination. They use electron optics that are analogous to the glass lenses of an optical light microscope. As the wavelength of an electron can be up to 100,000 times shorter than that of visible light, electron microscopes have a higher resolution of about 0.1 nm, which compares to about 200 nm for light microscopes.

Transmission electron microscopy

Transmission electron microscopy (TEM) is a microscopy technique in which a beam of electrons is transmitted through a specimen to form an image. The specimen is most often an ultrathin section less than 100 nm thick or a suspension on a grid. An image is formed from the interaction of the electrons with the sample as the beam is transmitted through the specimen. The image is then magnified and focused onto an imaging device, such as a fluorescent screen, a layer of photographic film, or a sensor such as a scintillator attached to a charge-coupled device.

Molecular-beam epitaxy

Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. MBE is used to fabricate diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). Original ideas of MBE process were first established by K.

Related publications (19)

Effect of growth interruptions on ultra thin InAs/InP quantum grown by chemical beam epitaxy

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