Publication

A new single photon avalanche diode in CMOS high-voltage technology

Radivoje Popovic
2007
Conference Papers

Abstract

we report a new single photon avalanche diode (SPAD) implemented in a commercially available high-voltage CMOS technology. The SPAD was designed with relatively low-doped layers to form p-/n- junction, instead of commonly adopted p+/n- or n+/p- structures. We used the readily available layers as given by the technology without any customization or post-processing. Careful design measures were taken to ensure planar junction breakdown. Compared with a p+/n- diode, a p-/n- SPAD has relative deep junction, wide depletion region, and thus improves probability of photon detection. The measurement shows a maximum photon detection efficiency of 34.4%, and remains above 20% from 400nm to 620nm, whereas the dark count rate is only 50cps at room temperature with 5V excess voltage.

Official source

https://infoscience.epfl.ch/entities/publication/c9f5a7cf-bd07-48a9-bc9a-cb2fdd185bbf

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Radivoje Popovic
2007
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/c9f5a7cf-bd07-48a9-bc9a-cb2fdd185bbf

About this result

Related concepts (32)

Depletion region

In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have been diffused away, or have been forced away by an electric field. The only elements left in the depletion region are ionized donor or acceptor impurities. This region of uncovered positive and negative ions is called the depletion region due to the depletion of carriers in this region, leaving none to carry a current.

P–n junction

A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electric current to pass through the junction only in one direction.

Bipolar junction transistor

A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material.

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A new single photon avalanche diode in CMOS high-voltage technology

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