645 V quasi-vertical GaN power transistors on silicon substrates

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Series Resonant Converters allow an efficient, galvanically isolated, and load-independent DC/DC conversion, and can be used as isolation DC/DC units in two-stage single-phase AC/DC converters. However, in such systems, the single-phase Active Front End un ...

The concept of MVDC collection network for renewable applications requires a high efficiency DC-DC converter to connect low voltage sources to the medium voltage network. The accurate measurement of low power losses is not possible with traditional electri ...

Stoichiometric silicon nitride is a highly regarded platform for its favorable attributes, such as low propagation loss and compatibility with complementary metal-oxide-semiconductor technology, making it a prominent choice for various linear and nonlinear ...

Polymer light-emitting electrochemical cells (PLECs) and light-emitting diodes (PLEDs) receive interest for large-area lighting and signage applications. During operation of a PLEC, a p-i-n junction develops where electrons and holes are injected into the ...

AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despite the recent progress, their performance is still far from what the material can offer in terms of on-resistance and breakdown voltage. To address this cha ...

In this work, we demonstrate a state-of-the-art high step-up/down dual-active-bridge (DAB) converter designed with GaN transistors, to achieve a high efficiency and large power-density. A quasi-planar matrix transformer with high step-up/down ratio is demo ...

Field-effect transistors (FETs) have established themselves as a leading platform for electrical detection of chemical and biological species. Their advantages over other optical, mechanical sensing platforms are attributed to being miniaturizable, mechani ...

The present invention relates, for example, to a semiconductor structure containing multiple parallel channels in which several parallel conductive channels are formed within the semiconductor structure. Electric contact or electrostatic control over all t ...

A new isolated DC-DC converter is presented suited for high voltage applications. It is based on the series connection of NPC inverter cells, using semiconductor devices with lower voltage blocking capability than the total input voltage. The galvanic isol ...

As the thin film silicon solar cell technology reaches a pivotal point to keep competing in the photovoltaic industry where crystalline silicon and other technologies currently dominate, it has become an urgent task to revolutionize some of its state-of-th ...

This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature ra ...

In this work electrolyte insulator semiconductor (EIS) structures based on lithographically fabricated Si SiO2 micropillars and pores are studied. The samples are characterized by means of impedance spectroscopy (IS) and they are compared to samples with a ...

We present a new probe for radiotracer detection in vivo. The device is based on silicon photomultipliers coupled with a scintillator and wirelessly compensated for supply voltage and temperature variations. The probe is positron sensitive. ...

In this work a double-gate pentacene TFT architecture is presented. The devices are fabricated on a polyimide substrate using three aligned levels of stencil lithography along with standard photolithography, which enable a soft yet well controlled device p ...

This article presents a neural recording amplifier suitable for large-scale integration with multi-electrode arrays (MEAs) in very low-power microelectronic cortical implants. The proposed amplifier is the most energy-efficient structure reported to date, ...

645 V quasi-vertical GaN power transistors on silicon substrates

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