Publications related to 645 V quasi-vertical GaN power transistors on silicon substrates

Related publications (15)

Active Filtering of Second-Order Harmonic in Two-Stage Single-Phase AC/DC Converters with Frequency Modulated Series-Resonant Converters

Series Resonant Converters allow an efficient, galvanically isolated, and load-independent DC/DC conversion, and can be used as isolation DC/DC units in two-stage single-phase AC/DC converters. However, in such systems, the single-phase Active Front End un ...

Institute of Electrical and Electronics Engineers (IEEE)2025

Power Losses Measurement Method for High Efficiency MV Oil-Insulated DC-DC Converter

Drazen Dujic

The concept of MVDC collection network for renewable applications requires a high efficiency DC-DC converter to connect low voltage sources to the medium voltage network. The accurate measurement of low power losses is not possible with traditional electri ...

Institute of Electrical and Electronics Engineers2025

Silicon nitride electric-field poled microresonator modulator

Camille Sophie Brès, Edgars Nitiss, Boris Zabelich, Anton Stroganov, Christian André Clément Lafforgue

Stoichiometric silicon nitride is a highly regarded platform for its favorable attributes, such as low propagation loss and compatibility with complementary metal-oxide-semiconductor technology, making it a prominent choice for various linear and nonlinear ...

2024

Traps for Electrons and Holes Limit the Efficiency and Durability of Polymer Light-Emitting Electrochemical Cells

Frank Nüesch, Wei-Hsu Hu, Camilla Arietta Vael-Garn

Polymer light-emitting electrochemical cells (PLECs) and light-emitting diodes (PLEDs) receive interest for large-area lighting and signage applications. During operation of a PLEC, a p-i-n junction develops where electrons and holes are injected into the ...

2022

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Remco Franciscus Peter van Erp, Catherine Erine, Halil Kerim Yildirim

AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despite the recent progress, their performance is still far from what the material can offer in terms of on-resistance and breakdown voltage. To address this cha ...

IEEE2021

97.4%-Efficient All-GaN Dual-Active-Bridge Converter with High Step-up High-Frequency Matrix Transformer

Elison de Nazareth Matioli, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Palliyage Srilak Nirmana Perera

In this work, we demonstrate a state-of-the-art high step-up/down dual-active-bridge (DAB) converter designed with GaN transistors, to achieve a high efficiency and large power-density. A quasi-planar matrix transformer with high step-up/down ratio is demo ...

2020

InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions

Maneesha Rupakula

Field-effect transistors (FETs) have established themselves as a leading platform for electrical detection of chemical and biological species. Their advantages over other optical, mechanical sensing platforms are attributed to being miniaturizable, mechani ...

EPFL2020

Semiconductor devices with multiple channels and three-dimensional electrodes

Elison de Nazareth Matioli, Jun Ma

The present invention relates, for example, to a semiconductor structure containing multiple parallel channels in which several parallel conductive channels are formed within the semiconductor structure. Electric contact or electrostatic control over all t ...

2018

High-Power High-Voltage Isolated DC-DC Converters using an NPC Balanced Capacitive Divider

Alfred Rufer

A new isolated DC-DC converter is presented suited for high voltage applications. It is based on the series connection of NPC inverter cells, using semiconductor devices with lower voltage blocking capability than the total input voltage. The galvanic isol ...

2015

A scalable and inexpensive surface-texturization method for advanced transparent front electrodes in microcrystalline and micromorph thin film silicon solar cells

Christophe Ballif, Franz-Josef Haug, Mathieu Gérard Boccard, Yang Wang

As the thin film silicon solar cell technology reaches a pivotal point to keep competing in the photovoltaic industry where crystalline silicon and other technologies currently dominate, it has become an urgent task to revolutionize some of its state-of-th ...

Wiley-VCH Verlag2015

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Michel Corfdir, Mehran Shahmohammadi, Etienne François Olivier Giraud

This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature ra ...

Japan Society of Applied Physics2013

Development and characterization of EIS structures based on SiO2 micropillars and pores before and after their functionalization with phosphonate films

Anna Fontcuberta i Morral, Anna Dalmau Mallorquí

In this work electrolyte insulator semiconductor (EIS) structures based on lithographically fabricated Si SiO2 micropillars and pores are studied. The samples are characterized by means of impedance spectroscopy (IS) and they are compared to samples with a ...

Wiley2011

A Compact Probe for Beta+Emitting Radiotracer Detection in Suregery, Biopsy, and Medical Diagnostics based on Silicon Photomultipliers

Edoardo Charbon, Claudio Bruschini, Marco Matter, Christian Mester

We present a new probe for radiotracer detection in vivo. The device is based on silicon photomultipliers coupled with a scintillator and wirelessly compensated for supply voltage and temperature variations. The probe is positron sensitive. ...

2011

Double-Gate Pentacene TFTs with Improved Control in Subthreshold Region

Mihai Adrian Ionescu, Jürgen Brugger, Andreea Veronica Savu, Katrin Sidler Arnet, Nenad Cvetkovic, Jyotshna Bhandari

In this work a double-gate pentacene TFT architecture is presented. The devices are fabricated on a polyimide substrate using three aligned levels of stencil lithography along with standard photolithography, which enable a soft yet well controlled device p ...

IEEE2009

A Micropower Neural Recording Amplifier with Improved Noise Efficiency Factor

Yusuf Leblebici, Alexandre Schmid, Vahid Majidzadeh Bafar

This article presents a neural recording amplifier suitable for large-scale integration with multi-electrode arrays (MEAs) in very low-power microelectronic cortical implants. The proposed amplifier is the most energy-efficient structure reported to date, ...

2009