Combining diamond electrodes with GaN heterostructures for harsh environment ISFETs

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The lateral structure of gallium nitride (GaN) semiconductors enables monolithic integration of logic and power devices, which offers promise to miniaturize bulky converters into a compact package. However, the concentrated heat that arises from this dense ...

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

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The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

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In this article, a series-connected SiC MOSFETs-based medium voltage (MV) dual active bridge (DAB) converter featuring a lowvoltage difference amongdevices and high efficiency is proposed. In the developed DAB converter, the zero voltage switching-on chara ...

Combining diamond electrodes with GaN heterostructures for harsh environment ISFETs

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