Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

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Laterally gated transistors have been proposed as an innovative device architecture in which a semiconducting channel is controlled by side gates. In this sense, the gate can either be in contact with the sidewalls or be separated by a gap. In the latter c ...

This brief reports the analytical modeling and measurements of the inflection in the MOSFET transfer characteristics at cryogenic temperatures. Inflection is the inward bending of the drain current versus gate voltage, which reduces the current in weak and ...

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...

This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements. Dopant freezeout, ...

In this work, we present a new device concept for compact high-voltage sensing with high-impedance input port, consisting of an AlGaN/GaN high-electron-mobility channel controlled by trapped carriers generated by a metallic electrode. The high-voltage appl ...

Charge density waves (CDWs), periodic modulations of the charge density, are among the most abundant and non-trivial ordered phases in condensed matter. Here we demonstrate the occurrence of multi-valley charge density waves (MV-CDW) on the semimetal Sb(11 ...

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...

This paper presents the design of the ANTIGONE ASIC in AMS 0.35 mu m technology that interfaces with ion-sensitive field effect transistors (ISFETs) to detect biomarkers like pH, Na+ and K+ in human sweat. The ISFET sensors generate a low current dc signal ...

Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...

We present the first steps to develop radiation sensors based on the graphene field effect transistor technology. Such a sensor exploits the ambipolar behavior of graphene near its Dirac point and it is not dependent on collecting charges, but it senses io ...

The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device, with a simple structure that presents many advantages in terms of device fabrication but also its principle of operation. The device has been largely used in low-n ...

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V BR ) and low ON-resistance (R ON ). The multi-channel structure was judiciously designed to yield a small sheet resistance (R s ) of 80 Ω/sq using only four 2DEG channels, ...

In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH) while maintaining a low specific on resistance (R ON,SP ) and high current density ...

We propose and experimentally demonstrate double-gated n-type WSe 2 FETs with excellent top gate high-k dielectric layer. Under back gate control, the devices behave as n-type enhancement transistors, with ON/OFF current ratios larger than 6 orders of magn ...

Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

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On the Dynamic Performance of Laterally Gated Transistors

Inflection Phenomenon in Cryogenic MOSFET Behavior

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs

On-Chip High-Voltage Sensors Based on Trap-Assisted 2DEG Channel Control

Statics and dynamics of multivalley charge density waves in Sb (111)

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Design of an Energy-Efficient Current-to-Frequency Converter for a Wearable Sensor Platform

Exploration of Negative Capacitance Devices and Technologies

Development of graphene-based ionizing radiation sensors

CJM: A Compact Model for Double-Gate Junction FETs

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control