Publication

Polarization Switching and Domain Wall Motion in Circular and Ring Capacitor Structures in PZT Thin Films

Related publications (31)

Electrical Model of a Wireless mW-Power and Mbps-Data Transfer System Over a Single Pair of Coils

Alexandre Schmid, David Palomeque Mangut

This paper proposes a system to transfer both mW-power and Mbps-data over an inductive link using a single pair of coils. The system is able to handle a wide range of loads by implementing a load adapter block that divides the operation into two phases: a ...

IEEE2022

Optimization of Edge Profile for Improved Anti-Resonance Quality Factor in Lithium Niobate SH0 Resonators

Luis Guillermo Villanueva Torrijo, Silvan Stettler

Thin-film lithium niobate (LNO) has been identified as a promising material platform for enabling high electromechanical coupling and low-loss piezoelectric resonators for filtering applications. In this work, the design and fabrication of fundamental shea ...

IEEE2022

Field-induced ultrafast modulation of Rashba coupling at room temperature in ferroelectric alpha-GeTe(111)

Jan Hugo Dil

Rashba materials have appeared as an ideal playground for spin-to-charge conversion in prototype spintronics devices. Among them, alpha-GeTe(111) is a non-centrosymmetric ferroelectric semiconductor for which a strong spin-orbit interaction gives rise to g ...

Nature Portfolio2022

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi

In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO2) and a ferroelectric layer (Si-doped HfO2) operating in the negative capacitance (NC) regime. The use of nanosecond- ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Long Spin Lifetime in Rare-Earth Single-Atom Magnets at Surfaces

Boris Sorokin

Further miniaturisation of magnetic storage devices requires an advent of new types of magnets, since classical ferromagnetic materials show lack of remanence at nano- and subnanoscale. A single atom can represent the smallest possible bit of information. ...

EPFL2022

Beyond 8 THz Displacement-field Nano-switches for 5G and 6G Communications

Mihai Adrian Ionescu, Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Pirouz Sohi, Mohammad Samizadeh Nikooytabalvandani

The rapid progress in high capacity communication systems is reaching extremely high data rates of 100 Gb s−1, which demands electronic switches with cut-off frequencies well above 1 THz. The excellent electron transport properties of III-V heterojunctions ...

IEEE2022

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Luca Capua, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

NATURE PORTFOLIO2021

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Igor Stolichnov, Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Exploring ferroelectricity in HfO2-based thin films by tackling application-relevant challenges

Matteo Cavalieri

Ferroelectric materials offer a broad range of application-relevant properties, including spontaneous polarization switchable by electric field. Archetypical representatives of this class of materials are perovskites, currently used in applications ranging ...

EPFL2021

Challenges and Applications to Operando and In Situ TEM Imaging and Spectroscopic Capabilities in a Cryogenic Temperature Range

Martial Duchamp, Vasiliki Tileli, Reinis Ignatans

In this Account, we describe the challenges and promising applications of transmission electron microscopy (TEM) imaging and spectroscopy at cryogenic temperatures. Our work focuses on two areas of application: the delay of electron-beam-induced degradatio ...

AMER CHEMICAL SOC2021

Low-Power and Wide-Tuning Range Frequency Generation for FMCW Radars in Advanced CMOS Technologies

Francesco Chicco

Nowadays, the internet of things (IoT) nodes have started to spread in various domains of our society, from the industrial to the domestic environment. The remote sensing is one among their fundamental functions. The implementation of a radio detection and ...

EPFL2021