Polarization Switching and Domain Wall Motion in Circular and Ring Capacitor Structures in PZT Thin Films

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Optimization of Edge Profile for Improved Anti-Resonance Quality Factor in Lithium Niobate SH0 Resonators

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Field-induced ultrafast modulation of Rashba coupling at room temperature in ferroelectric alpha-GeTe(111)

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Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

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In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO2) and a ferroelectric layer (Si-doped HfO2) operating in the negative capacitance (NC) regime. The use of nanosecond- ...

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Further miniaturisation of magnetic storage devices requires an advent of new types of magnets, since classical ferromagnetic materials show lack of remanence at nano- and subnanoscale. A single atom can represent the smallest possible bit of information. ...

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Beyond 8 THz Displacement-field Nano-switches for 5G and 6G Communications

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The rapid progress in high capacity communication systems is reaching extremely high data rates of 100 Gb s−1, which demands electronic switches with cut-off frequencies well above 1 THz. The excellent electron transport properties of III-V heterojunctions ...

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Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Mihai Adrian Ionescu, Ali Saeidi, Matteo Cavalieri, Teodor Rosca, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Luca Capua

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

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Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

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HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

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Exploring ferroelectricity in HfO2-based thin films by tackling application-relevant challenges

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Ferroelectric materials offer a broad range of application-relevant properties, including spontaneous polarization switchable by electric field. Archetypical representatives of this class of materials are perovskites, currently used in applications ranging ...

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Challenges and Applications to Operando and In Situ TEM Imaging and Spectroscopic Capabilities in a Cryogenic Temperature Range

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