Publications related to Effect of fluoride plasma treatment on InAlN/GaN HEMTs

Related publications (15)

In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation

Edoardo Charbon, Christian Enz, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico

In this paper, the influence of temperature and back-gate bias is experimentally investigated on 22 nm FDSOI CMOS process. Cryogenic DC characterization was carried out under various back-gate voltages, V back , from 2.95 K back to 300 K. An abrupt drop-of ...

IEEE2021

An Experimental Study Of The Photoresponse Of 1T-1R Oscillators Based On Vanadium Dioxide: Towards Spiking Sensing Systems

Olivier Martin, Mihai Adrian Ionescu, Teodor Rosca, Marco Riccardi, Fatemeh Qaderi Rahaqi

In this work we investigate the effect of visible light radiation on compact 1T-1R relaxation spiking oscillator cells based on 2-terminal Vanadium dioxide (VO2) structures. We illuminate the devices using a tunable wavelength laser between 400 and 850 nm ...

IEEE2021

Time-of-flight device and 3d optical detector

Christian Enz, Assim Boukhayma, Antonino Caizzone

A Time-of-flight optical device and a 3D optical detector comprising a CMOS integrated circuit with an array of photosensitive pixels that are, at least in part, interconnected to form macro-pixels (180). Each macro-pixel (180) groups a plurality of indivi ...

2020

Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

Elison de Nazareth Matioli, Jun Ma, Catherine Erine, Giovanni Santoruvo

In this letter, we present a multi-channel in-plane-gate field effect transistor (MC-IPGFET). In the proposed device, multiple vertically stacked two-dimensional electron gases (2DEGs) are simultaneously controlled by lateral in-plane gates formed with the ...

Institute of Electrical and Electronics Engineers2020

Selective, Fast-Response, and Regenerable Metal-Organic Framework for Sampling Excess Fluoride Levels in Drinking Water

Paul Joseph Dyson, Kyriakos Stylianou, Ngoc Tú Nguyên, Andrzej Gladysiak, Fatmah Ebrahim, Serhii Shyshkanov

Prolonged consumption of water contaminated with fluoride ions (F-) at concentrations exceeding 1.5 ppm can lead to considerable health implications, particularly in children and developing embryos. With irreversible and potentially severe forms of fluorid ...

2019

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...

EPFL2019

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu

In this letter, we present high-performance GaN-on-Si metal-oxide-semiconductor high electron mobility transistors with record reverse-blocking (RB) capability. By replacing the conventional ohmic drain with a hybrid tri-anode Schottky drain, a high revers ...

Institute of Electrical and Electronics Engineers2017

A low-voltage CMOS-compatible time-domain photodetector, device & front end electronics

Denis Sallin

During the last decades, the usage of silicon photodetectors, both as stand-alone sensor or integrated in arrays, grew tremendously. They are now found in almost any application and any market range, from leisure products to high-end scientific apparatuses ...

EPFL2016

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

Jian Zhang

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...

EPFL2016

Strontium hydroxyapatite and strontium carbonate as templates for the precipitation of calcium-phosphates in the absence and presence of fluoride

Janet Gordon Hering, Michèle Bernadette Heeb

The heterogeneous precipitation of calcium phosphates on calcium hydroxyapariLe (Ca-10(PO4)(4)OH)(2) or HAP) in the presence arid absence of fluoride is important in the formation of bone and teeth, protection against tooth decay, dental and skeletal fluor ...

Elsevier Science Bv2014

Investigation of the dominant 1/f noise source in silicon nanowire sensors

Sara Rigante

We analyzed 1/f noise in silicon nanowire ion-sensitive field-effect transistors (SiNW-ISFETs) having different wire widths ranging from 100 nm to 1 pin and operated under different gating conditions in order to determine the noise source and the sensor ac ...

Elsevier2014

Gate dependent photocurrents at a graphene p-n junction

Klaus Kern, Marko Burghard, Eva Carmen Peters

We have used scanning photocurrent microscopy to explore the electronic characteristics of a graphene p-n junction fabricated by local chemical doping of a graphene sheet. The photocurrent signal at the junction was found to be most prominent for gate volt ...

AIP American Institute of Physics2010

Semiconductor device for measuring ultra small electrical currents and small voltages

Radivoje Popovic, Marc Lany

A semiconductor device for measuring ultra low currents down to the level of single electrons or low voltages comprises a first and a second voltage supply terminal (1, 2), an input terminal (3) for receiving an electrical current or being supplied with a ...

2008

CF3-bearing aromatic and heterocyclic building blocks

A review. Fluorine remains an insiders' tip in the life sciences as it enables the fine-tuning of biol. properties. However, the synthesis of fluorine-substituted target compds. is not always trivial. Virtually any fluorine atom attached to an org. backbon ...

Wiley-VCH Verlag GmbH2006

A Closed-form Charge-based Expression for Drain Current in Symmetric and Asymmetric Double Gate MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2006