Vibrational piezoelectric energy harvesters based on thinned bulk PZT sheets fabricated at the wafer level

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Thin film piezoelectric materials offer a number of advantages in microelectromechanical systems (MEMS), due to the large motions that can be generated, often with low hysteresis, the high available energy densities, as well as high sensitivity sensors with wide dynamic ranges, and low power requirements. This paper reviews the literature in this field, with an emphasis on the factors that impact the magnitude of the available piezoelectric response. For non-ferroelectric piezoelectrics such as ZnO and AlN,

The lead magnesium niobate [Pb(Mg1/3Nb2/3)O-3 or PMN], and its solid solutions with lead titanate (PbTiO3 or PT), are of great interest because of their high electromechanical properties. At large PMN content, these materials exhibit relaxor characteristics with large electrostrictive strains and a large permittivity, while compositions near the morphotropic phase boundary present very interesting piezoelectric properties. So far, properties of these materials in ceramic, thin film and single-crystal form h

Relaxor ferroelectric thin films exhibit a drastic reduction in the dielectric constant and associated properties in the thin film form, even for thicknesses in the micron range, which are essentially infinity for the size effects typically investigated in conventional ferroelectrics. In order to investigate this phenomenon, the material system Lead Scandium Tantalum (PST) was fabricated by a Sol-Gel technique using mixed acetate and alkoxide precursors. The positional order of the "B" site species was tail

Direct measurements of longitudinal (d(33)) and transverse (d(31)) piezoelectric coefficients have been made on cuboid samples of 001-poled 0.955Pb[Zn1/3Nb2/3]O-3-0.045PbTiO(3) (PZN-4.5PT) and 0.68Pb[Mg1/3Nb2/3]O-3-0.32PbTiO(3) (PMN-32PT) single crystals. The measurements were made in a Berlincourt-type press over a wide range of dynamic and static bias stresses. In the transverse mode, the response was found to be essentially anhysteretic and d(31) was independent of the dynamic stress amplitude. In c

The mechanical integrity of tin-doped indium oxide (ITO) thin films sputtered onto a high temperature aromatic polyester developed for flexible display applications was investigated by means of tensile experiments equipped with electrical measurement, and carried out in-situ in an optical microscope. Attention was paid to the influence of ITO thickness, composition and crystalline microstructure, internal stress, annealing, and polymer substrate. It was observed that process-induced internal stresses were s

A two-dimensional (2-D) array (4 by 8) of single-photon avalanche diodes integrated in an industrial complementary metal-oxide-semiconductor (CMOS) process is presented. Each pixel combines a photodiode biased above its breakdown voltage in the so-called Geiger mode, a quenching resistor, and a simple comparator. The pitch between the pixels is 75 mum and the diameter of each pixel is 6.4 mum. The full integration allows reducing the number of charge carriers in a Geiger pulse. The electroluminescence respo

Light Induced Chemical Vapour Deposition (LICVD) of titanium dioxide thin films is studied in this work. It is shown that this technique enables to deposit locally and selectively a chosen crystalline phase with a precise controlled thickness at low substrate temperature, allowing even the use of polymer substrates. A home made LICVD reactor was set up, consisting of a main chamber in which the substrate was placed on a temperature controlled plate and could be irradiated perpendicularly through a window by

Main stream bulk CMOS and the variants of silicon-on-insulator (SOI) CMOS technologies are discussed with respect to testing for the quiescent current of mixed-signal integrated SOI circuits. The 2-3 times lower static power consumption in fully depleted CMOS/SOI compared to bulk CMOS allows quiescent current testing also for high performance analogue circuits at an acceptable defect resolutions. From first simulations and technological considerations, it turned out that quiescent current tests are able to

The (1-x)Pb(Sc1/2Nb1/2)O-3-xPbTiO(3)(x=0.4, PSNT(60/40)) thin films near the morphotropic phase boundary(MPB) composition were successfully deposited via sol-gel method. Taking the strict controls of processing factors such as the stable and homogeneous precursor solutions, conditions of heat treatment and suitable substrates, it was possible to obtain the pyrochlore-free PSNT(60/40) thin films. The effect of substrate on the microstructure and crystallographic orientation is shown. Dielectric behaviors of

Relaxor Pb(Mg1/3Nb2/3)O3(PMN) and its solid solutions with ferroelectric PbTiO3 (PT) are of considerable interest from both the applications and the scientific point of view. In the past, many attempts were made to prepare and study the properties of these material in thin film form. However, due to difficulties in the preparation of pure phase films with high PMN content, there exists very little knowledge on the properties of these important materials. It is the goal of this thesis to prepare PMN and PMN-

The present study aims at a better understanding of the high piezoelectric properties encountered in lead-based ferroelectrics by focusing on the extrinsic contributions to the response. The main characteristics of these materials are the highly nonlinear character of the electro-mechanical response and the presence of a morphotropic phase boundary (MPB) where properties are reaching a maximum. Thus, our approach was first to develop a new description for the piezoelectric hysteresis and nonlinearities and

This paper reports on the modeling and key design aspects of an innovative MEMS device: the suspended-gate MOSFET (SG-MOSFET). Based on the coupled-electromechanical equations describing the suspended gate actuation, we present the investigation of the pull-in voltages and of the capacitance switching and tuning ranges for RF applications. A quasi-analytical model and is developed for the gate-to-substrate capacitance of the SG-MOSFET and then, validated by numerical simulation. A SPICE macro-model using po

Vibrational piezoelectric energy harvesters based on thinned bulk PZT sheets fabricated at the wafer level

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Thin film piezoelectrics for MEMS

Pb(Mg1/3Nb2/3)O-3 and (1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) relaxor ferroelectric thick films: Processing and electrical characterization

Positional order in lead scandium tantalate (PST) as a "tool" for the investigation of relaxor ferroelectric behavior in thin films

Direct piezoelectric effect in relaxor-ferroelectric single crystals

Mechanical integrity of transparent conductive oxide films for flexible polymer-based displays

First fully integrated 2-D array of single-photon detectors in standard CMOS technology

Selective light induced chemical vapour deposition of titanium dioxide thin films

Fault detection in CMOS/SOI mixed-signal circuits using the quiescent current test

Preparation and dielectric properties of Pb(Sc1/2Nb1/2)O-3-PbTiO3 thin films near MPB compositions

Films minces relaxeur-ferroélectriques à base de Pb(Mg1/3NB2/3)O3 : élaboration, propriétés diélectriques et électromécaniques

Extrinsic contributions to the piezoelectric response of lead-based ferroelectrics

The suspended-gate MOSFET (SG-MOSFET): A modeling outlook for the design of RF MEMS switches and tunable capacitors