Publication

A gas flow uniformity study in large-area showerhead reactors for RF plasma deposition

Christoph Hollenstein, Alan Howling, Laurent Fabien Hubert Sansonnens
2000
Journal Articles

Abstract

A simple one-dimensional model for plasma deposition in a rectangular showerhead reactor with single side pumping has been developed in order to explain the mechanisms which yield uniform deposition using this gas flow configuration. Although the flow velocity increases linearly with distance towards the pumping side, the solution of the transport equations for the neutral species shows that their number densities are constant throughout the reactor. Consequently, the plasma and surface deposition reactions are independent of position in any arbitrarily-large-area showerhead reactor.

Official source

https://infoscience.epfl.ch/entities/publication/8e7e6c28-2fc9-4227-acc0-81b0fb2c8440

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Christoph Hollenstein, Alan Howling, Laurent Fabien Hubert Sansonnens
2000
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/8e7e6c28-2fc9-4227-acc0-81b0fb2c8440

About this result

Related concepts (32)

Plasma-enhanced chemical vapor deposition

Plasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state (vapor) to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases. The plasma is generally created by radio frequency (RF) (alternating current (AC)) frequency or direct current (DC) discharge between two electrodes, the space between which is filled with the reacting gases.

Chemical vapor deposition

Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films. In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber.

Pulsed laser deposition

Pulsed laser deposition (PLD) is a physical vapor deposition (PVD) technique where a high-power pulsed laser beam is focused inside a vacuum chamber to strike a target of the material that is to be deposited. This material is vaporized from the target (in a plasma plume) which deposits it as a thin film on a substrate (such as a silicon wafer facing the target). This process can occur in ultra high vacuum or in the presence of a background gas, such as oxygen which is commonly used when depositing oxides to fully oxygenate the deposited films.

Related publications (32)

A gas flow uniformity study in large-area showerhead reactors for RF plasma deposition

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