Publications related to 32 x 32 silicon photonic MEMS switch with gap-adjustable directional couplers fabricated in commercial CMOS foundry

Related publications (7)

A Back-Illuminated SPAD Fabricated With 40 nm CMOS Image Sensor Technology Achieving Near 40% PDP at 940 nm

This article introduces a back-illuminated (BI) single-photon avalanche diode (SPAD) based on 40 nm CMOS image sensor (CIS) technology which is the most advanced technology node for the fabrication of a SPAD up to date. It's based on a P-well (PW) and deep ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Energy Efficient Logic and Memory Design With Beyond-CMOS Magnetoelectric Spin-Orbit (MESO) Technology Toward Ultralow Supply Voltage

Kyojin Choo

Devices based on the spin as the fundamental computing unit provide a promising beyond-complementary metal-oxide-semiconductor (CMOS) device option, thanks to their energy efficiency and compatibility with CMOS. One such option is a magnetoelectric spin-or ...

Ieee-Inst Electrical Electronics Engineers Inc2023

Understanding and mitigating resistive losses in fired passivating contacts: role of the interfaces and optimization of the thermal budget

Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Luca Massimiliano Antognini, Sofia Libraro, Audrey Marie Isabelle Morisset, Julien Hurni, Ezgi Genç

This work presents a study of p-type passivating contacts based on SiCx formed via a rapid thermal processing (RTP) step, using conditions compatible with the firing used to sinter screen-printed metallization pastes in industry. The contributions of the t ...

Elsevier2023

Aperture-Controlled Fabrication of All-Dielectric Structural Color Pixels

Audrey Zoé Marie Jacquillat, Olivier Martin, Philippe Renaud, Arnaud Bertsch, Daniel Migliozzi, Evgenii Glushkov, Hsiang-Chu Wang, Clémentine Sophie Sarah Lipp

While interference colors have been known for a longtime, conventionalcolor filters have large spatial dimensions and cannot be used tocreate compact pixelized color pictures. Here we report a simple yetelegant interference-based method of creating microsc ...

AMER CHEMICAL SOC2023

Electronic Structure of InAs and InSb Surfaces: Density Functional Theory and Angle-Resolved Photoemission Spectroscopy

Gabriel Aeppli

The electronic structure of surfaces plays a key role in the properties of quantum devices. However, surfaces are also the most challenging to simulate and engineer. Here, the electronic structure of InAs(001), InAs(111), and InSb(110) surfaces is studied ...

WILEY2022

Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)

Mihai Adrian Ionescu, Kirsten Emilie Moselund

We present scalable III-V heterojunction tunnel FETs fabricated using a Si CMOS-compatible FinFET process flow and integrated on Si (100) substrates. The tunneling junction is fabricated through self-aligned selective p(+) GaAsSb raised source epitaxial re ...

IEEE2019

Quantitative robustness analysis of topological edge modes in C6 and valley-Hall metamaterial waveguides

Romain Christophe Rémy Fleury, Bakhtiyar Orazbayev

Recent advances in designing time-reversal-invariant photonic topological insulators have been extended down to the deep subwavelength scale, by employing synthetic photonic matter made of dense periodic arrangements of subwavelength resonant scatterers. I ...

2019