A Back-Illuminated SPAD Fabricated With 40 nm CMOS Image Sensor Technology Achieving Near 40% PDP at 940 nm

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Layered hybrid halide perovskites (LHPs) have attracted considerable attention in optoelectronics. They are based on tailored organic spacer cations templating halide perovskite slabs, featuring improved stabilities compared to their 3D halide perovskite a ...

This thesis introduces spectroscopy-free Raman biosensing, which may find increasing use in the next generation of wearable devices for preventive healthcare. While wearables have made substantial advancements in detecting physical biomarkers, they have ye ...

This work presents a study of p-type passivating contacts based on SiCx formed via a rapid thermal processing (RTP) step, using conditions compatible with the firing used to sinter screen-printed metallization pastes in industry. The contributions of the t ...

Devices based on the spin as the fundamental computing unit provide a promising beyond-complementary metal-oxide-semiconductor (CMOS) device option, thanks to their energy efficiency and compatibility with CMOS. One such option is a magnetoelectric spin-or ...

While interference colors have been known for a longtime, conventionalcolor filters have large spatial dimensions and cannot be used tocreate compact pixelized color pictures. Here we report a simple yetelegant interference-based method of creating microsc ...

The electronic structure of surfaces plays a key role in the properties of quantum devices. However, surfaces are also the most challenging to simulate and engineer. Here, the electronic structure of InAs(001), InAs(111), and InSb(110) surfaces is studied ...

In this work, we use periodic density functional theory(periodic DFT) to rigorously assign vibrational spectra measured on nanorough wet-processed hydrogenated Si(111) surfaces. We compare Si(111)-(1x1) surfaces etched by dilute HF and NH4F, featuring two ...

We report on a 32 x 32 silicon photonic micro-electro-mechanical-system (MEMS) switch with gap-adjustable directional couplers. The switch is fabricated on 200-mm silicon-on-insulator wafers in a commercial complementary metal-oxide-semiconductor (CMOS) fo ...

Hazardous chemicals excruciatingly contaminated water, air, and soil for the past few decades. Eco-friendly techniques to clean and or destroy these harmful chemicals is an urgent requirement at this moment. In this direction, a large number of methodologi ...

We present scalable III-V heterojunction tunnel FETs fabricated using a Si CMOS-compatible FinFET process flow and integrated on Si (100) substrates. The tunneling junction is fabricated through self-aligned selective p(+) GaAsSb raised source epitaxial re ...

Blue III-nitride light-emitting diodes (LEDs) are widely used nowadays in solid-state lighting, as white light can be produced by combining yellow phosphors and blue LEDs. This technology has the advantage to have a higher luminous efficiency than incandes ...

In this study we present a boron-doped silicon carbide layers as a hole-selective contact which is compatible with short annealing time (typically < 1 minute) as the one used for firing of metal pastes. The application of such layers on symmetrically proce ...

A Back-Illuminated SPAD Fabricated With 40 nm CMOS Image Sensor Technology Achieving Near 40% PDP at 940 nm

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Emergence of Light‐Transforming Layered Hybrid Halide Perovskites

Toward Wearable Biosensing by Spectroscopy-free Raman Shift Detection and Soft Optofluidics

Understanding and mitigating resistive losses in fired passivating contacts: role of the interfaces and optimization of the thermal budget

Energy Efficient Logic and Memory Design With Beyond-CMOS Magnetoelectric Spin-Orbit (MESO) Technology Toward Ultralow Supply Voltage

Aperture-Controlled Fabrication of All-Dielectric Structural Color Pixels

Electronic Structure of InAs and InSb Surfaces: Density Functional Theory and Angle-Resolved Photoemission Spectroscopy

Quantitative Analysis of Nanorough Hydrogenated Si(111) Surfaces through Vibrational Spectral Assignment by Periodic DFT Calculations br

32 x 32 silicon photonic MEMS switch with gap-adjustable directional couplers fabricated in commercial CMOS foundry

Recent progress in black phosphorus nanostructures as environmental photocatalysts

Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)

Elucidating the role of the InGaN UL in the efficiency of InGaN based light-emitting diodes

A passivating contact concept compatible with a short thermal treatment