Publication

Characterization of InGaAs and InAlAs layers on InP by four-crystal high resolution X-ray diffraction and wedge transmission electron microscopy

Alok Rudra, Marc Ilegems
1991
Conference Papers

Abstract

The indium desorption rates from InGaAs and InAlAs grown on InP substrates have been measured by wedge transmission electron microscopy as a function of the growth temperature. Desorption becomes significant at 545-degrees-C for both materials. No automatching effects could be observed under the growth conditions of the experiment. The bandgap of In(y)Al1-yAs has been measured at 77 K as a function of the indium content. The composition and the strain have been measured by four-crystal high resolution X-ray diffraction with symmetrical (004) and assymmetrical (115 +/-) Bragg reflections. The intrinsic bandgap follows the relation E(g)(y) = 2.774 - 2.411 y and the strained material the relation E(gs)(y) = 0.671 + 5.236y-6.929y2.

Official source

https://infoscience.epfl.ch/entities/publication/7d04df0e-98b7-4e7d-a72a-4f6235ffc542

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Alok Rudra, Marc Ilegems
1991
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/7d04df0e-98b7-4e7d-a72a-4f6235ffc542

About this result

Related concepts (11)

X-ray crystallography

X-ray crystallography is the experimental science determining the atomic and molecular structure of a crystal, in which the crystalline structure causes a beam of incident X-rays to diffract into many specific directions. By measuring the angles and intensities of these diffracted beams, a crystallographer can produce a three-dimensional picture of the density of electrons within the crystal. From this electron density, the mean positions of the atoms in the crystal can be determined, as well as their chemical bonds, their crystallographic disorder, and various other information.

X-ray spectroscopy

X-ray spectroscopy is a general term for several spectroscopic techniques for characterization of materials by using x-ray radiation. When an electron from the inner shell of an atom is excited by the energy of a photon, it moves to a higher energy level. When it returns to the low energy level, the energy which it previously gained by the excitation is emitted as a photon which has a wavelength that is characteristic for the element (there could be several characteristic wavelengths per element).

X-ray fluorescence

X-ray fluorescence (XRF) is the emission of characteristic "secondary" (or fluorescent) X-rays from a material that has been excited by being bombarded with high-energy X-rays or gamma rays. The phenomenon is widely used for elemental analysis and chemical analysis, particularly in the investigation of metals, glass, ceramics and building materials, and for research in geochemistry, forensic science, archaeology and art objects such as paintings.

Related publications (1)

Characterization of InGaAs and InAlAs layers on InP by four-crystal high resolution X-ray diffraction and wedge transmission electron microscopy

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