High performance Fully-vertical GaN-on-Si power MOSFETs

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This paper introduces a novel integration method of localized metallic back-gates into fully-depleted silicon-on-insulator (FDSOI) multi-gate FETs, enabling robust front-to-back electrostatic coupling from room temperature to cryogenic conditions, without ...

In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

Recombination at metal/semiconductor interfaces represents the main limitation in mainstream c-Si solar cells, primarily based on the passivated emitter and rear cell (PERC) concept. Full-area passivating contacts based on SiOx/poly-Si stacks are a candida ...

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly ...

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The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Sc-doped aluminum nitride (AlScN) allows for piezoelectric devices with large electromechanical coupling and the benefits increase with larger Sc doping in the film. However, with a larger Sc concentration, the process window narrows, and it is necessary t ...

The present invention concerns a bodily implantable or probe device and microelectrode fabrication method comprising providing at least one silicon substrate including an electronic device or unit; providing, on a first side of the silicon substrate, at le ...

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

Atomic layer deposition (ALD) is one of the premier methods to synthesize ultra-thin materials on complex surfaces. The technique allows for precise control of the thickness down to single atomic layers, while at the same time providing uniform coverage ev ...

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

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Atomic layer deposition (ALD) is a method to grow thin metal oxide layers on a variety of materials for applications spanning from electronics to catalysis. Extending ALD to colloidally stable nanocrystals promises to combine the benefits of thin metal oxi ...

The medium-voltage (MV) dual active bridge (DAB) converter with series-connected SiC (S-SiC) MOSFETs is a promising solution for high-power-density isolated dc/dc converter. To improve the voltage sharing and reliability of S-SiC, relatively large snubber ...

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Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal–oxi ...

BackgroundThe increasing use of complex and high dose-rate treatments in radiation therapy necessitates advanced detectors to provide accurate dosimetry. Rather than relying on pre-treatment quality assurance (QA) measurements alone, many countries are now ...

High performance Fully-vertical GaN-on-Si power MOSFETs

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Nanomole Process: Enabling Localized Metallic Back-Gates for Enhanced Cryogenic Front-to-Back Coupling in FDSOI Quantum Dots

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Microstructural and electrical characterization of high temperature passivating contacts for silicon solar cells

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

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Piezoelectric and elastic properties of Al0.60Sc0.40N thin films deposited on patterned metal electrodes

Bodily implant microelectrode and bodily implant microelectrode fabrication method

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Optimizing Atomic Layer Deposition Processes with Nanowire-Assisted TEM Analysis

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Colloidal Atomic Layer Deposition on Nanocrystals Using Ligand-Modified Precursors

Phase Shift Angle Segmentation Modulation for Soft-Switching Medium-Voltage DAB Converter With Series-Connected SiC MOSFETs

Stress tolerance of lightweight glass-free PV modules for vehicle integration

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Characterization of a flexible a-Si:H detector for in vivo dosimetry in therapeutic x-ray beams