Publication

Silicon nanowire-based memristor device and method for producing thereof

2026

Abstract

Disclosed is a memristor device (1) comprising two electrodes (3), each forming or including a schottky diode (5) having a schottky barrier, wherein the schottky diodes are polarized in a back-to-back arrangement, and at least one silicon nanowire (4) connecting the two electrodes, wherein the silicon nanowire is provided with a superficial oxide layer (6). a corresponding fabrication process including an oxidation process for the si nanowire(s) is also described.

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2026

Abstract

Official source

Related concepts (25)

Schottky diode

The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes. When sufficient forward voltage is applied, a current flows in the forward direction.

Diode

A diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance). It has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other. A semiconductor diode, the most commonly used type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. It has an exponential current–voltage characteristic. Semiconductor diodes were the first semiconductor electronic devices.

Metal–semiconductor junction

In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact.

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Silicon nanowire-based memristor device and method for producing thereof

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