Publication

Determination of oxygen content in MBE AlGaAs layers

Marc Ilegems
1988
Conference Papers

Abstract

Quantitative Secondary Ion Mass Spectrometry (SIMS) determination of oxygen incorporation in epitaxial AlGaAs/GaAs layers is strongly affected by the presence of oxygen adsorbed on the surface. By flooding the sample with oxygen isotope O18 during the analysis, one can account and correct for the influence of the adsorbed oxygen O16 species. After the background subtraction, the oxygen content can be determined from the measured ratio of AlO to Al or O to Al signals, knowing the relative sensitivity factors between these quantities as obtained from measurement of an O16 implanted standard.

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https://infoscience.epfl.ch/entities/publication/6b64b20f-7a3b-4b17-b9d5-fa77e9e69f26

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Marc Ilegems
1988
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/6b64b20f-7a3b-4b17-b9d5-fa77e9e69f26

About this result

Related concepts (32)

Oxygen

Oxygen is the chemical element with the symbol O and atomic number 8. It is a member of the chalcogen group in the periodic table, a highly reactive nonmetal, and an oxidizing agent that readily forms oxides with most elements as well as with other compounds. Oxygen is Earth's most abundant element, and after hydrogen and helium, it is the third-most abundant element in the universe. At standard temperature and pressure, two atoms of the element bind to form dioxygen, a colorless and odorless diatomic gas with the formula O2.

Metalorganic vapour-phase epitaxy

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition.

Gallium arsenide

Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.

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Determination of oxygen content in MBE AlGaAs layers

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