Publications related to High aspect ratio etching of nanopores in PECVD SiC through AAO mask

Related publications (27)

High density lithium niobate photonic integrated circuits

Tobias Kippenberg, Rui Ning Wang, Johann Emmeram Riemensberger, Anat Siddharth, Mikhail Churaev, Nikolai Kuznetsov, Zihan Li, Junyin Zhang, Zelin Tan

Photonic integrated circuits have the potential to pervade into multiple applications traditionally limited to bulk optics. Of particular interest for new applications are ferroelectrics such as Lithium Niobate, which exhibit a large Pockels effect, but ar ...

Nature Portfolio2023

Demonstrating and Unraveling a Controlled Nanometer-Scale Expansion of the Vacancy Defects in Graphene by CO2

Kumar Varoon Agrawal, Luis Francisco Villalobos Vazquez de la Parra, Kuang-Jung Hsu, Mojtaba Chevalier

A controlled manipulation of graphene edges and vacancies is desired for molecular separation, sensing and electronics applications. Unfortunately, available etching methods always lead to vacancy nucleation making it challenging to control etching. Herein ...

Wiley-VCH Verlag GmbH2022

Investigation of femtosecond laser-enabled 3D micro-infiltration processes

Enrico Casamenti

In the last decades, the femtosecond laser micromachining of glass has attracted a lot of attention due to its three-dimensional manufacturing ability and flexibility both in terms of compatible substrates and modification types. Yet, to fully unravel its ...

EPFL2022

Smart Slit Assembly Employing Continuously Tunable MEMS Shutter

Niels Quack, Hamed Sattari, Gergely Huszka, Anton Lagosh

We present the concept and detailed design of a Smart Slit Assembly for next generation spectrometers, and we experimentally demonstrate operation of an individual 221 mu m x 111 mu m smart slit channel employing a MEMS actuated shutter to continuously mod ...

SPIE-INT SOC OPTICAL ENGINEERING2021

Shining Diamond: from Micro- and Nano-Engineering to Quantum Photonics

Sichen Mi

The discovery of room-temperature single photon emission from color centers in diamond has in recent years boosted research interest in this renowned material in photonics and quantum community and beyond. Following understanding some basic principles of h ...

EPFL2021

Systematic design of millisecond gasification reactor for the incorporation of gas-sieving nanopores in single-layer graphene

Kumar Varoon Agrawal, Luis Francisco Villalobos Vazquez de la Parra, Shiqi Huang, Shaoxian Li, Kuang-Jung Hsu

Etching an ensemble of vacancy defects (nanopores) in single-layer graphene (SLG) to obtain a high density of nanopores with an effective size that enables high-performance gas sieving is challenging. This is because nanopore nucleation and expansion are u ...

2021

The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias

Benoît Bruno Pasquier, Edoardo Charbon, Sandro Carrara, Simone Frasca, Rebecca Camilla Leghziel

We present here, for the first time, a fabrication technique that allows manufacturing scallop free, non-tapered, high aspect ratio in through-silicon vias (TSVs) on silicon wafers. TSVs are among major technology players in modern high-volume manufacturin ...

Nature Research2021

Mems Shutter Based Variable Optical Attenuator Integrated With Large Core Multimode Rectangular Waveguides

Niels Quack, Hamed Sattari, Gergely Huszka, Anton Lagosh

We present the concept and design, and we report on the experimental performance of a broadband Variable Optical Attenuator (VOA) for integration with large-core rectangular multimode waveguides. Operation of an individual 221 mu m x 111 mu m optical waveg ...

IEEE2021

Fabrication and applications of AuAg alloy metasurfaces and hybrid metal dielectric nanoantennas

Debdatta Ray

The most prevalent materials used in the field of plasmonics are Au and Ag. However, for the past few years, the plasmonic community has also been looking for alternative materials that have lower losses than Au and higher stability than Ag. This thesis is ...

EPFL2021

Optimized electrochemical breakdown etching using temporal voltage variation for formation of nanopores in a silicon membrane

Miao Zhang

Dielectric breakdown etching is a well-known method of making nanopores on thin (similar to 50 nm) dielectric membranes. However, voltage driven translocation of biomolecules through such nanopores becomes extremely fast. For improved detection, for instan ...

ELSEVIER SCIENCE SA2021

Real- and Q-space travelling: multi-dimensional distribution maps of crystal-lattice strain (epsilon(044)) and tilt of suspended monolithic silicon nanowire structures

Yusuf Leblebici, Antonia Neels, Alex Dommann, Zuhal Tasdemir

Silicon nanowire-based sensors find many applications in micro- and nano-electromechanical systems, thanks to their unique characteristics of flexibility and strength that emerge at the nanoscale. This work is the first study of this class of micro- and na ...

INT UNION CRYSTALLOGRAPHY2020

Single crystal diamond gain mirrors for high performance vertical external cavity surface emitting lasers

Niels Quack, Alexandru Mereuta, Andrei Caliman, Pascal Gallo, Grigore Suruceanu, Gergely Huszka, Mehdi Naamoun

We report on the design, fabrication and optical performance of gain mirrors in single crystal diamond substrates for vertical external cavity surface emitting lasers (VECSELs). VECSELs have gained attention recently due to their potential for high emissio ...

2020

Towards a coherent database of thermal boundary conductance at metal/dielectric interfaces

Ludger Weber, Maïté Blank

The thermal boundary conductance (TBC) of metal/dielectric couples was measured for a large variety of metals on silicon, sapphire, and diamond using time domain thermoreflectance and compared to data previously obtained on diamond. In the case of silicon, ...

2019

Ion beam etching redeposition for 3D multimaterial nanostructure manufacturing

Philippe Renaud, Arnaud Bertsch, Benoît Xavier Emmanuel Desbiolles

A novel fabrication method based on the local sputtering of photoresist sidewalls during ion beam etching is presented. This method allows for the manufacture of three-dimensional multimaterial nanostructures at the wafer scale in only four process steps. ...

2019

Nontrivial evolution of the Sb(111) electronic and atomic structure after ion irradiation

Anton Smirnov

Defects in crystal structure of layered material can modify the surface states. Ion bombardment is a simple way to introduce defects into a crystal lattice in the surface region. Comprehensive scanning tunneling microscopy (STM), low-energy electron diffra ...

ELSEVIER SCIENCE BV2019

Halogen-bond driven self-assembly of perfluorocarbon monolayers on silicon nitride

Nicola Marzari, Antonio Abate, Ngoc Linh Nguyen

The self-assembly of a single layer of organic molecules on a substrate is a powerful strategy to modify surfaces and interfacial properties. Thiolates, silanes, phosphonates and carboxylates are widely used head-groups to link organic molecules to specifi ...

Royal Society of Chemistry2019

Single crystal diamond micro-disk resonators by focused ion beam milling

Niels Quack, Teodoro Graziosi, Marcell Kristof Kiss, Sichen Mi

We report on single crystal diamond micro-disk resonators fabricated in bulk chemical vapor deposition diamond plates (3 mm x 3 mm x 0.15 mm) using a combination of deep reactive ion etching and Focused Ion Beam (FIB) milling. The resulting structures are ...

2018

Enhancement of optical quality factor by thermal annealing of single crystal diamond micro-resonators

Niels Quack, Teodoro Graziosi, Marcell Kristof Kiss, Sichen Mi

We report on the increase in optical quality factor of a suspended single crystal diamond micro-disk resonator by thermal annealing. The resonators are fabricated by Deep Reactive Ion Etching (DRIE) to obtain circular pillars in bulk single crystal diamond ...

IEEE2018

Monolithic Fabrication of Silicon Nanowires Bridging Thick Silicon Structures

Yusuf Leblebici, Davide Sacchetto, Oliver Peric, Zuhal Tasdemir

A monolithic process is developed for the fabrication of Si nanowires within thick Si substrates. A combination of anisotropic etch and sidewall passivation is utilized to protect and release Si lines during the subsequent deep etch. An etch depth of 10 mu ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

Nanoscale Lithography and Thermometry with Thermal Scanning Probes

Samuel Tobias Howell

Thermal scanning probe lithography (t-SPL) is an advanced lithography technique in which a heated atomic force microscope tip locally modifies a sample material. Due to the nanometer-sized tip apex diameter, t-SPL enables patterning of sub-10 nm structures ...

EPFL2018