Publications related to Hydrogen-Bonded Oligothiophenes for Organic Electronics

Related publications (14)

Printed PEDOT:PSS and KCl-Based Electrochemical Gas Sensor for Acetone Detection

The detection of volatile organic compounds (VOCs), such as acetone is critical in clinical diagnostics and environmental monitoring. Acetone is a key biomarker for several medical conditions, most notably diabetes, and is widely used as an industrial solv ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2025

Optoelectronics based on the spin-valley physics of 2D materials

Juan Francisco Gonzalez Marin

Two-dimensional (2D) materials are atomically thin crystals with exceptional mechanical, electrical and optical properties. Their unique characteristics originating from quantum confinement in the vertical dimension have attracted a strong interest for sci ...

EPFL2022

Fully integrated Si:HfO2 Negative Capacitance 2D-2D WSe2/SnSe2 Subthermionic Tunnel FETs

Mihai Adrian Ionescu, Jürgen Brugger, Clara-Fausta Moldovan, Ali Saeidi, Xia Liu, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

We report the first experimental demonstration and performance characterization of a fully integrated negative capacitance (NC) WSe2/SnSe2 p-type Tunnel FETs (TFETs), validating the use of NC as a technology booster to achieve a significantly improved sub- ...

IEEE2022

Synthesis of NIR-Absorbing Squaraine Dyes and their Use in Organic Upconversion Devices

Karen Verena Strassel

Squaraines are organic dyes showing the advantages of a simple synthesis, high absorption coefficients and tunable bandgaps from the visible to the near-infrared (NIR) region. Their molecular structure is based on a polymethine chain and a donor-acceptor-d ...

EPFL2021

Deep-UV-Enhanced Approach for Low-Temperature Solution Processing of IZO Transistors with High-k AlOx/YAlOx Dielectric

Danick Briand, Jaemin Kim, Alessio Mancinelli

Solution processing is an attractive alternative to standard vacuum fabrication techniques for the large-area manufacturing of metal oxide (MOx)-based electron devices. Here, we report on thin-film transistors (TFTs) based on a solution-processed indium zi ...

AMER CHEMICAL SOC2020

Dopant-Free Hole-Transporting Polymers for Efficient and Stable Perovskite Solar Cells

Michael Graetzel, Shaik Mohammed Zakeeruddin, Wolfgang Richard Tress, Michael Saliba

A series of novel polymers (P1P6) derived from the combination of different units (including thiophene, triarylamine, and spirobifluorene) were successfully synthesized, completely characterized, and used as hole-transporting materials (HTMs) for perovskit ...

American Chemical Society2019

Low Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Michele De Marchi, Maxime Victor Thammasack

The race for performance of integrated circuits is nowadays facing a downscale limitation. To overpass this nanoscale limit, modern transistors with complex geometries have flourished, allowing higher performance and energy efficiency. Accompanying this br ...

Amer Chemical Soc2017

Cobalt and/or copper complexes for use as hole transport layer dopants to improve optoelectronic or photoelectrochemical devices

Michael Graetzel, Mohammad Khaja Nazeeruddin, Ulf Anders Hagfeldt, Shaik Mohammed Zakeeruddin, Fabrizio Giordano, Marina Freitag, Julian Burschka

This invention discloses a new class of dopants that allows easy tuning of the chem., phys., optical and/or electronic properties of the doping agent in order to carefully adapt it to the desired application, such as org. solar cells or solid state dye-sen ...

2016

Computationally Efficient Multiple-Independent-Gate Device Model

Gianluca Piccinini, Mariagrazia Graziano, Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon

Nanowire Field Effect Transistors (FETs) with multiple independent gates around a silicon channel feature ultimate gate control and are regarded as promising candidates for next generation transistors. Being inherently more complex than conventional gate-a ...

Institute of Electrical and Electronics Engineers2016

Molecular bonding with the RPAx: From weak dispersion forces to strong correlation

Nicola Colonna

In a recent paper [Phys. Rev. B 90, 125102 ( 2014)], we showed that the random phase approximation with exchange (RPAx) gives accurate total energies for a diverse set of systems including the high and low density regime of the homogeneous electron gas, th ...

Amer Physical Soc2016

A durable SWCNT/PET polymer foil based metal free counter electrode for flexible dye-sensitized solar cells

Michael Graetzel, Shaik Mohammed Zakeeruddin, Thomas Moehl, Aswani Yella, Fabrizio Giordano, Jean-David Décoppet

An ITO free, highly conductive PET foil is fabricated by depositing aqueous single-walled carbon nanotube (SWCNT) ink that exhibits remarkable durability when exposed to severe mechanical stability tests. Excellent adhesion of the SWCNT film on PET was obt ...

Royal Society of Chemistry2014

Strategies to Optimizing Dye-Sensitized Solar Cells : Organic Sensitizers, Tandem Device Structures, and Numerical Device Modeling

Sophie Wenger

Dye-sensitized solar cells (DSCs) constitute a novel class of hybrid organic-inorganic solar cells. At the heart of the device is a mesoporous film of titanium dioxide (TiO2) nanoparticles, which are coated with a monolayer of dye sensitive to the visible ...

EPFL2010

Properties of interfaces in amorphous/crystalline silicon heterojunctions

Christophe Ballif, Aïcha Hessler-Wyser, Stefaan De Wolf, Christian Monachon, Luc Fesquet

To study recombination at the amorphous/crystalline Si (a- Si:H/c-Si) heterointerface, the amphoteric nature of silicon (Si) dangling bonds is taken into account. Modeling interface recombination measured on various test structures provides insight into th ...

Wiley2010

Ultra low power subthreshold current-mode logic utilizing a novel PMOS load device

Yusuf Leblebici, Seyed Armin Tajalli, Eric Vittoz

A novel approach for implementing MOS current-mode logic (MCML) circuits that can operate with ultra low bias currents is introduced. Measurements of test structures fabricated in 0.18 μm CMOS technology show that the proposed PMOS load device concept can ...

2007