Publication

The quantum Hall effect as a standard to define the laboratory unit of resistance

Marc Ilegems
1987
Journal Articles

Abstract

A measurement system has been developed to determine the resistance of integer quantum Hall plateaux relative to a room-temperature reference resistor network of nominally the same values. Silicon MOSFET and GaAs-AlGaAs samples have been successfully fabricated and measured. The results confirm that the integer quantum Hall effect (QHE) may be used to monitor a group of standard resistors comprising the laboratory unit of resistance. They demonstrate the feasibility of defining the laboratory unit of resistance by adopting a value for the quantum Hall resistance h/e2.

Official source

https://infoscience.epfl.ch/entities/publication/677c4c1d-8558-4378-a1f3-1802ccb51ad0

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Marc Ilegems
1987
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/677c4c1d-8558-4378-a1f3-1802ccb51ad0

About this result

Related concepts (26)

Quantum Hall effect

The quantum Hall effect (or integer quantum Hall effect) is a quantized version of the Hall effect which is observed in two-dimensional electron systems subjected to low temperatures and strong magnetic fields, in which the Hall resistance Rxy exhibits steps that take on the quantized values where VHall is the Hall voltage, Ichannel is the channel current, e is the elementary charge and h is Planck's constant. The divisor ν can take on either integer (ν = 1, 2, 3,...) or fractional (ν = 1/3, 2/5, 3/7, 2/3, 3/5, 1/5, 2/9, 3/13, 5/2, 12/5,.

Fractional quantum Hall effect

The fractional quantum Hall effect (FQHE) is a physical phenomenon in which the Hall conductance of 2-dimensional (2D) electrons shows precisely quantized plateaus at fractional values of . It is a property of a collective state in which electrons bind magnetic flux lines to make new quasiparticles, and excitations have a fractional elementary charge and possibly also fractional statistics.

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

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The quantum Hall effect as a standard to define the laboratory unit of resistance

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