Publication

Conduction Mechanisms in Organic MOSFETs with Bottom and Top Source and Drain Contacts

2006
Posters

Abstract

This work reports on the fabrication and characterization of the organic thin film transistors OTFTs. Pentacene transistors are fabricated in top and bottom S/D contact configurations on preoxidized Si wavers. Three different metals – Pt, Au and Al – are used for the contacts. Similar performances are reported for Au and Pt bottom contact devices. Dielectric surface engineering leads to a subthreshold swing of 600mV/dec and a 0.9V threshold voltage. Top contact devices show an improvement in the mobility of two decades compared to the bottom contact devices. The mobility extracted on Au and Pt top contact devices is 0.51cm2/(Vs) and 0.12cm2/(Vs) respectively. It is shown that for top contact devices, the ION current depends strongly on the pentacene thickness. A three decades increase in IOFF current is reported for Au top contact devices.

Official source

https://infoscience.epfl.ch/entities/publication/7aa7d6f5-8f80-494a-9b20-620c168a2ed4

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2006
Posters

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/7aa7d6f5-8f80-494a-9b20-620c168a2ed4

About this result

Related concepts (32)

Semiconductor device

A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

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Conduction Mechanisms in Organic MOSFETs with Bottom and Top Source and Drain Contacts

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