High quality factor copper inductors integrated in deep dry-etched quartz substrates

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In this paper, we investigate the performance of a piezoelectric membrane actuated by an epitaxial piezoelectric Pb(Zr0.2Ti0.8)O-3 (PZT) thin film for localized-mass sensing applications. The fabrication and characterization of piezoelectric circular membranes based on epitaxial thin films prepared on a silicon wafer are presented. The dynamic behavior and mass sensing performance of the proposed structure are experimentally investigated and compared to numerical analyses. A 1500 mu m diameter silicon membr

We introduce a theoretical scheme to study defect energy levels and band alignments at semiconductor-oxide interfaces. The scheme relies on hybrid functionals to overcome the band gap underestimation typically achieved with semilocal density functionals. For atomically localized defects, the more accurate description achieved with, hybrid functionals does not lead to significant shifts of the charge transition levels, provided these levels are referred to a common reference potential. This result effectivel

Photovoltaic cells have been dominated so far by solid state p-n junction devices made from silicon or gallium arsenide wavers or thin film embodiments based on amorphous silicon, CdTe and copper indium gallium diselenide (CIGS) profiting from the experience and material availability of the semiconductor industry. Recently there has been a surge of interest for devices that are based on nanoscale inorganic or organic semiconductors commonly referred to as “bulk” junctions due to their interconnected three-d

This paper presents a resist-less process for parallel fabrication of sub-micrometer Al-AlOx-Al superconducting tunnel junctions. A custom stencil is fabricated containing 200 nm low-stress SiN membranes with micro-apertures. The stencil is aligned and clamped with a 1 mu m accuracy to a substrate wafer containing Ti-Au contact electrodes. The junctions are fabricated by evaporating Al from two different angles, with an intermediate in-situ oxidation step. Measurements of the devices down to 0.3 K show sten

Increasing interest in specific applications in the field of micro- and nano-electromechanical systems (MEMS and NEMS) has raised the request for new functional polymeric materials. Epoxy based photoresists are being broadly used for the fabrication of micromechanical devices and for the definition of patterns with high aspect ratio in the micrometer scale. SU-8, the well known thick photo resist with superior lithographic properties over a wide range of thicknesses, have made a tremendous impact on the dev

We have developed hybrid AFM probes with SU-8 polymer body and full platinum and tungsten cantilever and tip. The fabrication process uses surface micromachining of a (100) silicon wafer. The metal (platinum or tungsten) is sputter deposited in oxidation sharpened moulds, giving a final tip sharpness smaller than 20 nm. A SU-8 body is subsequently formed. The release is either done by a wet back-side or dry top-side process. The measured hardness of the tungsten and platinum film values 14.8 GPa and 7.3 GPa

High defect density exhibited by nanoelectronic technologies, and parameter variability already affecting the operation of very-deep submicron CMOS systems demand for a combination of specific solutions, focusing at each various levels of abstraction in the development design-flow. Where traditionally applied methods fail under massive defect densities, we propose a top-down development strategy where the hardware overhead is adapted to the desired level of reliability. A CAD software tool supporting the me

The endeavour to develop nanodevices demands for patterning methods in the nanoscale. To bring nanodevices to the market, there is a need for fast, low-cost replication nanopatterning methods. In addition, an increased flexibility of the nanopatterning methods is important for the engineering of multimaterial and multifunctional nano/micro-electro-mechanical systems (NEMS/MEMS), such as polymer-based electronic and sensor devices, 3D microfluidic systems, and bio-analytical systems. A series of alternative,

The ac loss of superconducting composite depends strongly on coupling between superconducting filaments via the resistive matrix. The established technique for loss reduction using twisted filaments relies on the decoupling of the filaments below a critical coupling field Bc, which increases with the reduction of the twist pitch and the matrix conductivity. Although the concept of Bc may be clearly demonstrated using two infinite slabs of finite length, further details on its correlation with the filament/c

PZT (PbZrx Ti1-xO3) thin films have been locally grown by means of sol-gel deposition and local annealing on microhotplates. The microhotplates were based on a stress compensated Si3N4 /SiO2 membranes as structural elements and contained tantalum silicide filaments (Ta5Si3) for resistive heating. Above the filaments, a passivation layer of SiO2, an adhesion layer of Ti/TiO2 and a bottom electrode of Pt were deposited. Due to the low heat conductivity of the membrane, crystallization of the PZT film occurs e

A novel MEMS device architecture: the SOI SG-MOSFET, which combines a solid- state MOS transistor and a suspended metal membrane in a unique metal-over- gate architecture, is proposed. A unified physical analytical model (weak, moderate and strong inversions) is developed and used to investigate main electrostatic characteristics in order to provide first-order design criteria for low-voltage operation and high-performance. It is demonstrated that the use of a thin gate oxide (

A novel MEMS technological platform for RF passive components, namely RF MEMS switches, tuneable capacitors and high-Q suspended inductors, is reported. The proposed process employs a metal (Al, AlSi or Cu) as active movable layer and amorphous silicon or polycrystalline silicon as sacrificial layers, providing multi-air-gaps. Various types of substrates like bulk silicon and SOI can be used. Full-dry releasing of suspended beams and membranes is performed with SF_6 or XeF_2, with unrivalled yield/reproduci

High quality factor copper inductors integrated in deep dry-etched quartz substrates

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Finite element analysis and experiments on a silicon membrane actuated by an epitaxial PZT thin film for localized-mass sensing applications

A hybrid functional scheme for defect levels and band alignments at semiconductor-oxide interfaces

Recent Applications of Nanoscale Materials: Solar Cells

Quick and Clean: Stencil Lithography for Wafer-Scale Fabrication of Superconducting Tunnel Junctions

Improved and new properties of resist materials by doping with nanoparticles and nanocrystals

Full tungsten and platinum nanoprobes for electrically conducting scanning probe methods

Design for Reliability of Nanometer-Scale Electronics under High Defect Density

Advancing towards well-controlled full-wafer nanostencil lithography

3D Modeling of Coupling Between Superconducting Filaments via Resistive Matrix in AC Magnetic Field

Local growth of sol-gel films by means of microhotplates

Modeling and design of a low-voltage SOI suspended-gate MOSFET (SG- MOSFET) with a metal-over-gate architecture

A novel RF MEMS technological platform