Publication

Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer

Giorgio Margaritondo
1997
Journal Articles

Abstract

We report a modification by thin silicon nitride intralayers of the Au/n-GaAs)(100) Schottky barrier height. Thin intralayers were obtained by nitridation of evaporated Si films on decapped GaAs substrates in an argon-nitrogen mixture plasma. The nitridation was performed at a beam energy

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https://infoscience.epfl.ch/entities/publication/5333477a-a830-445d-b3f1-106d48ac3c88

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Giorgio Margaritondo
1997
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/5333477a-a830-445d-b3f1-106d48ac3c88

About this result

Related concepts (32)

Graphene

Graphene (ˈgræfiːn) is an allotrope of carbon consisting of a single layer of atoms arranged in a hexagonal lattice nanostructure. The name is derived from "graphite" and the suffix -ene, reflecting the fact that the graphite allotrope of carbon contains numerous double bonds. Each atom in a graphene sheet is connected to its three nearest neighbors by σ-bonds and a delocalised π-bond, which contributes to a valence band that extends over the whole sheet.

Ohmic contact

An ohmic contact is a non-rectifying electrical junction: a junction between two conductors that has a linear current–voltage (I–V) curve as with Ohm's law. Low-resistance ohmic contacts are used to allow charge to flow easily in both directions between the two conductors, without blocking due to rectification or excess power dissipation due to voltage thresholds. By contrast, a junction or contact that does not demonstrate a linear I–V curve is called non-ohmic.

Metal–semiconductor junction

In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact.

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Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer

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