Publications related to Layered nanocomposite gas-barrier films on polymers

Related publications (14)

Decoration of ZnO Nanorod Arrays with Heterojunction of Graphene Quantum Dots and MoS2 Nanoparticles for Photoelectrochemical Water Splitting

Conversion of sunlight to a chemical fuel through photoelectrochemical (PEC) water splitting is deemed to be a promising solution to satisfy future energy needs. In this study, a photoanode based on the triple heterojunction of MoS2/graphene quantum dots/Z ...

2025

Spin polarization detection via chirality-induced tunnelling currents in indium selenide

Shun Feng, Andras Kis, Gabriele Pasquale, Eloi Régis L Collette

Chirality, a basic property of symmetry breaking, is crucial for fields such as biology and physics. Recent advances in the study of chiral systems have stimulated interest in the discovery of symmetry-breaking states that enable exotic phenomena such as s ...

Springer Science and Business Media LLC2025

Boosting solar fuel production of bismuth ferrite thin film by incorporating reduced graphene oxide

Mohammadreza Golobostanfard

In this study, a facile chemical approach was utilized to successfully fabricate a porous bismuth ferrite (BiFeO3, BFO)/reduced graphene oxide (rGO) nanocomposite thin film as a photoanode for photoelec-trochemical (PEC) water splitting. The BFO nanopartic ...

2023

Nonlinear plasmonics with monocrystalline gold

Sergejs Boroviks

Plasmonic nanostructures allow to controllably enhance linear and nonlinear light-matter interactions by concentrating the electromagnetic fields at the scales below the diffraction limit. This feature is highly desired for many applications, e.g. bio- and ...

2021

Nano-electromechanical systems based on ultra-thin semiconductors

Sajedeh Manzeli

Nowadays, the interest in 2D materials has gone far beyond graphene. Specially, monolayers of transition metal dichalcogenides (TMDs) offer a broad spectrum of electronic and optical properties, and show the potential to revolutionize the electronics indus ...

EPFL2018

Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

Quantum mechanical confinement in electron-hole bilayer tunnel field-effect transistors (EHBTFETs) affects in a substantial way the band-to-band tunneling (BTBT) mechanism that constitutes their operating principle. Field-induced quantization is known to s ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

Christophe Ballif, Stefaan De Wolf, Duncan Thomas Lindsay Alexander, Quentin Thomas Jeangros, Johannes Peter Seif, Bénédicte Demaurex

Low-temperature (

American Institute of Physics2014

M-Plane GaN/InAlN Multiple Quantum Wells in Core-Shell Wire Structure for UV Emission

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Georg Rossbach

We report on the epitaxial growth of high-quality core-shell nonpolar m-plane GaN/InAlN multiple quantum wells (MQWs) on the sidewall facets of c-oriented hexagonal GaN wires. Pseudomorphic growth without generation of threading dislocations has been estab ...

Amer Chemical Soc2014

Optically Transparent Cathode for Dye-Sensitized Solar Cells Based on Graphene Nanoplatelets

Michael Graetzel, Jun Ho Yum, Ladislav Kavan

Commercial graphene nanoplatelets in the form of optically transparent thin films on F-doped SnO2 (FTO) exhibited high electrocatalytic activity toward I-3(-)/I- redox couple, particularly in electrolyte based on, ionic liquid (Z952). The charge-transfer r ...

American Chemical Society2011

Gold-Free GaAs Nanowire Synthesis and Optical Properties

Anna Fontcuberta i Morral

To date, the use of gold for the synthesis of nanowires has proven to be nearly impossible to circumvent, regardless of the potential negative effects on the nanowires physical properties. In this paper, the synthesis of gallium arsenide nanowires without ...

Institute of Electrical and Electronics Engineers2011

InAs Quantum Dot Arrays Decorating the Facets of GaAs Nanowires

Anna Fontcuberta i Morral, Emanuele Uccelli

InAs quantum dot arrays are obtained on GaAs nanowire facets by molecular beam epitaxy. The GaAs nanowires are first grown by the gallium-assisted catalyst-free method. Decoration of the nanowire facets with InAs quantum dots is achieved only when the face ...

American Chemical Society2010

Photoelectrochemical properties of sensitized thin films

Mohamad Hojeij

In recent years, the fabrication of novel ultrathin film systems featuring multi-functionalities has been extensively studied due to their potential applications in photonics, sensors and solar cells. In a general sense, the primary goal of the present the ...

EPFL2009

High Molar Extinction Coefficient Ion-Coordinating Ruthenium Sensitizer for Efficient and Stable Mesoscopic Dye-Sensitized Solar Cells

Michael Graetzel, Shaik Mohammed Zakeeruddin, Robin Humphry-Baker, Jacques-Edouard Moser

Ru(4,4-dicarboxylic acid-2,2'-bipyridine) (4,4'-bis(2-(4-(1,4,7,10-tetraoxyundecyl)phenyl)ethenyl)-2,2'-bipyridine) (NCS)(2), a new high molar extinction coefficient ion-coordinating ruthenium sensitizer was synthesized and characterized using H-1 NMR, Fou ...

Wiley-Blackwell2007

Growth and characterization of single quantum dot devices for fiber-based quantum communications

Blandine Alloing

Single photon sources have recently attracted significant interest for their potential role in the future applications of quantum cryptography, and in the longer term, quantum computing. Among the different types of single photon emitters, semiconductor qu ...

EPFL2006