Publication

Evaluation of InP/InGaAsP distributed Bragg reflectors grown by chemical-beam epitaxy

Elyahou Kapon, Jean-François Carlin, Alok Rudra, Klaus Leifer, Claude-Albert Berseth
1998
Journal Articles

Abstract

We have evaluated the structure of high-reflectivity InP/InGaAsP distributed Bragg reflectors grown by chemical-beam epitaxy at a growth rate of 3 mu m/h. Transmission electron microscopy combined with electron energy loss spectroscopy indicate lateral fluctuations in the GaInAsP alloy composition, clearly visible in the 490-510 degrees C growth temperature range, but less perceptible between 460 and 480 degrees C. In the higher temperature range, the modulation in composition shows a higher frequency along the [1 (1) over bar 0] direction than along [1 1 0].

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https://infoscience.epfl.ch/entities/publication/4ccedb0f-a11b-4894-9d48-1fd7e56eebfb

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Elyahou Kapon, Jean-François Carlin, Alok Rudra, Klaus Leifer, Claude-Albert Berseth
1998
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/4ccedb0f-a11b-4894-9d48-1fd7e56eebfb

About this result

Related concepts (27)

Transmission electron microscopy

Transmission electron microscopy (TEM) is a microscopy technique in which a beam of electrons is transmitted through a specimen to form an image. The specimen is most often an ultrathin section less than 100 nm thick or a suspension on a grid. An image is formed from the interaction of the electrons with the sample as the beam is transmitted through the specimen. The image is then magnified and focused onto an imaging device, such as a fluorescent screen, a layer of photographic film, or a sensor such as a scintillator attached to a charge-coupled device.

Electron microscope

An electron microscope is a microscope that uses a beam of electrons as a source of illumination. They use electron optics that are analogous to the glass lenses of an optical light microscope. As the wavelength of an electron can be up to 100,000 times shorter than that of visible light, electron microscopes have a higher resolution of about 0.1 nm, which compares to about 200 nm for light microscopes.

Auger electron spectroscopy

Auger electron spectroscopy (AES; pronounced oʒe in French) is a common analytical technique used specifically in the study of surfaces and, more generally, in the area of materials science. It is a form of electron spectroscopy that relies on the Auger effect, based on the analysis of energetic electrons emitted from an excited atom after a series of internal relaxation events. The Auger effect was discovered independently by both Lise Meitner and Pierre Auger in the 1920s.

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Evaluation of InP/InGaAsP distributed Bragg reflectors grown by chemical-beam epitaxy

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